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The magnetotransistor for 2-axis magnetic field measurement in CMOS technology
(2015-08-17)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Pengpad, Puttapon
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Srihapat, Arckom
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Jeamsaksiri, Wutthinan
This paper presents a magnetotransistor for detecting magnetic field in vertical and lateral directions (B<inf>Y</inf> and B<inf>Z</inf>) by relying on the difference between base and collector currents (ΔI<inf>CB</inf>). It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. The experiment showed that, at 10 mA of biasing current, the B<inf>Y</inf> and B<inf>Z</inf> direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.7 and 1.35 %/T, respectively. The sensitivity at emitter current 20mA are 0.55 and 0.7 %/T for vertical and lateral magnetic field directions, respectively. This research on the magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications.
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The increase sensitivity of PNP-magnetotransistor in CMOS technology
(2015-02-02)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Pengpad, Puttapon
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Srihapat, Arckom
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Jeamsaksiri, Wutthinan
This paper presents improve sensitivity of pnp-magnetotransistor for detect vertical magnetic field response. The device structure consisted of one emitter, four collectors and four bases. The four collectors are separate to form four terminals. The same is true for the four bases. The experiment showed that, at 2 and 4mA of biasing current, magnetic field in B<inf>Z</inf> direction sensitivity within the range of 0-400 mT are 0.045 and 0.09 mV/mT in single mode. The sensitivity of merge mode are 0.15 and 0.3 mV/mT. The magnetic field response of merge mode shows 4-time increase of the magnetic field sensitivity comparative to single mode.
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A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination-deflection effect
(2014-01-01)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Penpondee, Naritchaphan
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Pengpad, Puttapon
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Srihapat, Arckom
This article presents a novel magnetotransistor based on carrier recombination-deflection effect for detecting magnetic field in three dimensions (B<inf>X</inf>, B<inf>Y</inf>, and B<inf>Z</inf>) by relying on the difference between base and collector currents (I<inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. All four collector terminals were connected with each other. The same was true for the four base terminals. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the B <inf>X</inf>, B<inf>Y</inf> and B<inf>-Z</inf> direction sensitivity to magnetic field within the range of 0-400 mT are 2, 5 and 14.5%/T, respectively. This research on the merged magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications. © 2014 Elsevier Ltd.
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High sensitive nanocrystal titanium nitride EG-FET pH sensor
(2013-10-29)
Rayanasukha, Yossawat
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Porntheeraphat, Supanit
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Bunjongpru, Win
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Khemasiri, Narathon
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Pankiew, Apirak
Solid state pH-sensor device with high efficiency has successfully prepared by using TiN thin film as sensing membrane of extended gate field effect transistor (EG-FET) device. This research has described the physical properties and sensing characteristics of TiN membrane thin film which deposited on SiO<inf>2</inf>/Si substrate through reactive D.C. magnetron sputtering system. Thenanocrytal-TiNwith anatasestructure depended on substrate heating conditions was revealed from glancing angle x-ray diffraction. The I<inf>DS</inf>-V<inf>GS</inf> measurement in the standard buffer solutions showed that the sensitivity of fabricated TiN-EGFET pH deviceis 59.82mV/pH. © (2013) Trans Tech Publications, Switzerland.
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The low power 3D-magnetotransistor based on CMOS technology
(2011-12-01)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Penpondee, Naritchaphan
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Pengpad, Puttapon
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Srihapat, Arckom
This article presents a 3D magnetotransistor for detecting magnetic field in three dimensions (B <inf>X</inf>, B <inf>Y</inf>, and B <inf>Z</inf>) by relying on the difference between base and collector currents (ΔI <inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the BX, BY and BZ direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.05, 0.07 and 0.145 mV/mT, respectively. © 2011 IEEE.
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The effect injection width and temperature-offset compensation of magnetotransistor
(2011-12-01)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Penpondee, Naritchaphan
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Pengpad, Puttapon
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Srihapat, Arckom
This paper presents effect of injection witdh on Magnetotransistor. Emitter area was confined by LOCOS and the injection window size was varied from 4, 5 to 10 microns. With bias current of 3 mA the window size 4 micron gives best sensitivity at 10mV/T. Measument linearity is 0.1 % full scale. voltage gain of 10 was used for minimizing temperature coefficient to be around 7.9 mV/°C measured from 25 to 125 °C. Temperature coefficient divided by sensitivity give us a relative temperature sensitivity of 7.9 % T/°C. Second magnetic sensor device has been used for temperature compensation. The second device was config as magnetic field immune then it was used as a temperature offset voltage reference. The added module reduces overall temperature sensitivy down to 0.3 % T/°C. © 2011 Published by Elsevier Ltd.
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An in-line contact configuration for the Hall sensor device
(2011-09-22)
Wipatawit, Praphaphan
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Wangtong, Salisa
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Trithaveesak, Opas
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Hruanun, Charndet
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Poyai, Amporn
This paper introduces a Hall sensor device with an inline contact configuration geometry, similar to the Vertical Hall Device (VHD) but unlike the latter, is sensitive to magnetic fields perpendicular to the surface of the sensor. It is fabricated using a standard 0.8μm CMOS process provided by Thai Microelectronic Center (TMEC). Measurements made of the components of magnetic fields in 3-axes (<inf>x</inf>, <inf>y</inf> and <inf>z</inf>) have shown strong responses to fields perpendicular to the <inf>x</inf> plane of the sensor, but completely insensitivity to in-plane magnetic fields, <inf>y</inf> and <inf>z</inf>. The best current-related sensitivity reaches a maximum of 20μV/AT at an applied current of 1mA. Hall voltages are linear up to 500mT. Angular measurements performed show good angular selectivity. In-line contact configuration devices will be good potential candidates as 3D magnetic vector sensors. © 2011 IEEE.
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The low power magnetotransistor based on the CMOS technology
(2010-07-30)
Sottip, Panyakorn
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Phetchakul, Toempong
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Leepattarapongpan, Chana
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Penpondee, Naritchapan
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Pengpad, Putapon
This paper presents the low power magnetotransistor detect magnetic field density in vertical direction. The devices can detect magnetic field by Lorentz force act upon minority carrier in base and difference between base and collector current (ΔI<inf>CB</inf>) was occurred. The structure of the low power magnetotransistor consist of one emitter, one collector and one base contact and designed decrease emitter injection area was 5 um and growth LOCOS oxide around emitter area. The structure was generated and simulated by TCAD Sentuarus simulation package and shows increase sensitivity of the low power magnetotransistor when compare the three terminals magneto-transistor. From the experiment, the low power magneto-transistor can operate at bias current less than 1 mA and high sensitivity is 20.64 mV/T. The device increase sensitivity 2.53 times at bias current 5 mA and decrease power consumption 85% when compare the three terminals magnetotransistor.
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Merged three-terminal magnetotransistor based on the carrier Recombination-Deflection effect
(2008-12-01)
Leepattarapongpan, Chana
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Penpondee, Naritchapan
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Phetchakul, Toempong
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Phengan, Weera
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Chaowicharat, Eakalak
This article presents a merged three terminals magnetotransistor based on the carrier recombination - deflection effect. This particular magnetotransistor structure relies on the combination of difference of base current and collector current in +x and -x directions. As a result, the output voltage and absolute sensitivity to magnetic field will be double. The structure of magnetotransistor consists of oneemitter, two collector and two base contacts. The devices can detect magnetic field in vertical direction (BZ) by relying on the difference between base current and collector current (°ICB). From the experiment, with emitter current at 5, 8, and 10 mA, the magnetotransistor had the highest sensitivity of 1.125mV/mT when emitter current was at 10 mA. © 2008 IEEE.
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Effect of base width and implantation dose on performance of 3-terminal magnetotransistor
(2007-12-01)
Woradet, Jaroenmit
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Phetchakul, Toempong
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Chareankid, Sompong
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Pengchan, Weera
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Klunngien, Nipapan
This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (F<inf>L</inf>) from magnetic field. The structure of magnetotransistor is designed like a structure of a PNP bipolar junction transistor which comprises of 3 terminals, i.e., emitter, collector and base. The base width (L) is varied (10, 20 and 30 μm) where the spacing between collector and base is fixed at 40 μm. The emitter and collector regions are doped with boron (BF <inf>2</inf>) at the dose of 3×1015, 5×1015 and 1×1016 ions/cm2. It is found that the sensitivity is increased when increasing L and the implantation dose. It is also demonstrated that the linear relationship between the output voltage of the magnetotransistor circuit and magnetic field can be obtained. © 2007 IEEE.

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