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Author: search.filters.author.Nakachai, RattapongHas files: No

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    High sensitivity non-split drain MAGFET for wireless sensor networks
    (2020-08-14)
    Nakachai, Rattapong
    ;
    Poyai, Amporn
    ;
    Phetchakul, Toempong
    The non-split drain MAGFET proposed in this paper is aspossess an ideal, highest sensitivity in the same type of device, current mode for low power, and low voltage that can be embedded within a system for wireless sensor networks application. It is a split-drain MAGFET that is designed to have no gap between drains so that there is no loss from the gap. There are two split contacts in one drain to represent the split drains for current difference that induced from due to magnetic field. The relative sensitivity comparison among all the gaps (3, 2, 1, and 0 µm) with all aspect ratio of width (W)/length (L) (L/W = 1, 0.6, and 0.2) at biased current 0.25 mA shows that the zero gap or the non-split drain MAGFET structure gives the highest sensitivity. The sensitivities of the non-split drain at the aspect ratios L/W = 1, 0.6, and 0.2 in this study are 0.0595, 0.0479, and 0.0231 T<sup>−</sup><sup>1</sup>, respectively. It is proved that the gap is not necessary for the MAGFET. It is a new, smart way to design the MAGFET for the highest sensitivity and gap lossless for modern sensor applications.
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    Non-split drain MAGFET
    (2019-07-01)
    Nakachai, Rattapong
    ;
    Poyai, Amporn
    ;
    Phetchakul, Toempong
    This paper presents the design of non-split drain MAGFET for high sensitivity magnetic device. The structure is split drain MAGFET that has no gap between drains so drain is only one drain that has split contacts within a drain. It is proved that MAGFET is not necessary to design by split drain with gap between them. The sensitivity is the highest for non-split drain structure. This study compares sensitivities of the two structures with gap between drains of 3, 2, 1 and 0μm at 0.25 mA, aspect ratio L/W=1, which are 0.0326, 0.0389, 0.0481 and 0.0595 T<sup>-1</sup>, respectively. The relative sensitivities (S<inf>r</inf>) of non-split drain are also highest at other aspect ratios which are 0.0003, 0.0036, 0.0092 and 0.0231 T<sup>-1</sup> for L/W=0.2 and 0.0182, 0.0264, 0.0338 and 0.0479 T<sup>-1</sup> for L/W=0.6, respectively. The non-split drain MAGFET is a new design for highest sensitivity. The non-split drain design is the smart way for high sensitivity MAGFET.
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    Magnetic finfet (MAGFinFET)
    (2019-07-01)
    Pamonchom, Chanvit
    ;
    Nakachai, Rattapong
    ;
    Sutthinet, Chalin
    ;
    Poyai, Amporn
    ;
    Phetchakul, Toempong
    This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.
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    Horizontal Magnetic Field MAGFET by Conventional MOSFET Structure
    (2018-07-02)
    Nakachai, Rattapong
    ;
    Poonsawat, Sawatdipong
    ;
    Sutthinet, Chalin
    ;
    Ruangphanit, Anucha
    ;
    Poyai, Amporn
    The MOSFET used as magnetic field sensor is presented. It is a conventional structure that has a source, a gate, a drain and a substrate or body terminal which fabricated by standard CMOS process. It detects the horizontal y-direction magnetic field in parallel and perpendicular to currents. The device is biased for channel current and substrate current. The mechanism is Hall Effect in current mode. The induced Lorentz's force deflects currents between drain current and substrate forward current causes output differential current. The relation shows linearly dependence between magnetic field density and output differential current. The relative sensitivity depends on amount of bias currents.
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    Simulation of MOSFET as horizontal magnetic MOSFET (MAGFET)
    (2017-12-14)
    Nakachai, Rattapong
    ;
    Phetchakul, Toempong
    ;
    Poonsawat, Sawatdipong
    ;
    Poyai, Amporn
    This work proposes the regular long channel MOSFET structure used as magnetic MOSFET (MOSFET that can detect magnetic field) in parallel direction (y-axis). The structure is regular MOSFET that has drain, gate, source and substrate (body). The mechanism of device is Hall effect in current mode between channel MOSFET current and substrate current in x-axis direction. The dimensions of channel MOSFET are 20 μm wide and 20 μm long. The channel and substrate currents are balance adjusted in the same values at 0.5, 1 and 1.5 mA. From the simulation results by TCAD sentaurus, the relative sensitivity of device is 0.01 T<sup>-1</sup> in y and - y direction, respectively. It can be used as magnetic sensor for one dimension in parallel field.