Wirunchit, Supamas
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Preferred name
Wirunchit, Supamas
Alternative Name
Wirunchit, S.
Main Affiliation
Email
supamas.wi@kmitl.ac.th
15 results
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Item type:Publication, The enhancement of sensitivity and response times of PDMS-based capacitive force sensor by means of active layer modification(2021-06-01); ; ; Jessadaluk, SukittiyaIn this work, sensitivity and response times of PDMS-based capacitive force sensors are enhanced via the modifications of the PDMS layer. Two modifying approaches are proposed; (i) change PDMS's (elastomer:curing agent) ratio and (ii) adding conductive polymer PEDOT:PSS into the PDMS layer. The change of PDMS (elastomer:curing agent) ratio from (10:1) to (30:1) increases the sensitivity from 0.4 0.08 to 0.72 0.23 kPa-1 (+80%) but it does not significantly affect the response/recovery times. In addition, by adding 1% wt. of PEDOT:PSS to PDMS (30:1), the further increment of sensitivity from 0.72 0.23 to 1.44 0.17 kPa-1 (+100%) and the shorter response time from 1.59 0.02 to 0.45 0.03 s (-72%) are observed. The mechanical and electrical studies reveal that the change of PDMS (elastomer:curing agent) ratio and the adding of PEDOT:PSS to PDMS layer result in the modification of PDMS's deformability and the increase of charge transportation, leading to the enhancement of sensing characteristics of the sensors. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Influence of Dragon Fruit Peels on the Synthesis of Antibacterial Nano Zinc Oxide (Nano-ZnO) via Green Synthesis Method(2026-05-20); ; This research focused on adding value to dragon fruit peel waste by utilizing it in the synthesis of antibacterial nano zinc oxide (Nano-ZnO) through a green synthesis process. In this study, all the dragon fruit peels were extracted using the solvent extraction technique with three different solvents (deionized water, ethanol, and methanol) for 1, 2, 3, 4, and 5 h, respectively. The amount of flavonoids from the extract was determined using UV-Vis spectrophotometer to obtain the optimum extraction time, which was 4 h for DI water as the solvent. Moreover, antibacterial Nano-ZnO was synthesized successfully by a green synthesis process using zinc nitrate Zn(NO3)2 and the extracts. The molecular vibrations as well as the crystal structure and morphology were investigated by Fourier transform infrared spectroscopy (FT-IR), Raman spectroscopy (Raman), X-ray diffraction (XRD), and field emission scanning electron microscopy (FE-SEM), respectively. Additionally, the antibacterial efficacy of the nano-zinc oxide samples was evaluated using disc diffusion method. Gram-positive bacteria (Staphylococcus aureus) and Gram-negative bacteria (Escherichia coli) were the test agents. The research shows that the X-ray diffraction patterns of all synthesized ZnO nanoparticles (NPs) exhibited a wurtzite (hexagonal) crystal structure. FT-IR spectroscopy confirmed the presence of Zn-O stretching vibrations at approximately 500 cm⁻¹. Furthermore, the FE-SEM reveals that ZnO-yellow particles displayed spherical morphologies with an average particle size of 145 nm. At the same time, ZnO-White and ZnO-Red nanoparticles exhibited a combination of rod-like and elliptical morphologies, with average particle sizes of 168 nm and 321 nm, respectively. In addition, the antibacterial activity demonstrates effective inhibition against S. aureus and E. coli in all three ZnO nanoparticle conditions. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Improved Efficiency of Polymer Solar Cells by means of Coating Hole Transporting Layer as Double Layer Deposition(2017-10-20); ; ; Polymer solar cells is one of the promising technologies that gain tremendous attentions in the field of renewable energy. Optimization of thickness for each layer is an important factor determining the efficiency of the solar cells. In this work, the optimum thickness of Poly(3,4-ethylenedioxythione): poly(styrenesulfonate) (PEDOT:PSS), a famous polymer widely used as hole transporting layer in polymer solar cells, is determined through the analyzing of device's photovoltaic parameters, e.g. short circuit current density (J<inf>sc</inf>), open circuit voltage (V<inf>oc</inf>), fill factor (FF) as well as power conversion efficiency (PCE). The solar cells were prepared with multilayer of ITO/PEDOT:PSS/PCDTBT:PC<inf>70</inf>BM/TiO<inf>x</inf>/Al by rapid convective deposition. In such preparation technique, the thickness of the thin film is controlled by the deposition speed. The faster deposition speed is used, the thicker film is obtained. Furthermore, double layer deposition of PEDOT:PSS was introduced as an approach to improve solar cell efficiency. The results obviously reveal that, with the increase of PEDOT:PSS thickness, the increments of J<inf>sc</inf> and FF play the important role to improve PCE from 3.21% to 4.03%. Interestingly, using double layer deposition of PEDOT:PSS shows the ability to enhance the performance of the solar cells to 6.12% under simulated AM 1.5G illumination of 100 mW/cm<sup>2</sup>. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Modification of a photoanode by means of localized surface plasmon resonance from Au nanoparticles decorated on ZnO nanorods for photoelectrochemical applications(2019-01-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Study of optical and electrical properties of tin doped cobalt-phthalocyanine thin films prepared by thermal co-evaporation(2018-09-05); ; ; The aim of this research is to study the specific properties e.g. surface morphology, optical absorption as well as electrical conductivity of tin-doped cobalt-phthalocyanine (CoPc) thin film prepared by thermal co-evaporation. The concentration of tin metal dopant is controlled via evaporation rate during film's preparation. The change of tin quantity leads to the significant changes not only in morphology but also in molecular packing of the doped films. Moreover, the dramatic increase in both carrier mobility and carrier concentration should provide the enhancement in electrical conductivity of the doped films. By controlling the specific properties of the tin-doped CoPc thin film, the increasing efficiency of optoelectronic applications based on metal-phthalocyanine could be achieved. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Phase formation polycrystalline vanadium oxide via thermal annealing process under controlled nitrogen pressure(2017-10-20); ; ; This article provides an approach to improve and control crystal phases of the sputtering vanadium oxide (V<inf>x</inf>O<inf>y</inf>) thin films by post-thermal annealing process. Usually, as-deposited V<inf>x</inf>O<inf>y</inf> thin films at room temperature are amorphous phase: post-thermal annealing processes (400 °C, 2 hrs) under the various nitrogen (N<inf>2</inf>) pressures are applied to improve and control the crystal phase of V<inf>x</inf>O<inf>y</inf> thin films. The crystallinity of V<inf>x</inf>O<inf>y</inf> thin films changes from amorphous to α-V<inf>2</inf>O<inf>5</inf> phase or V<inf>9</inf>O<inf>17</inf> polycrystalline, which depend on the pressure of N<inf>2</inf> carrier during annealing process. Moreover, the electrical resistivity of the V<inf>x</inf>O<inf>y</inf> thin films decrease from 10<sup>5</sup> Ω cm (amorphous) to 6×10<sup>-1</sup> Ω cm (V<inf>9</inf>O<inf>17</inf>). Base on the results, our study show a simply method to improve and control phase formation of V<inf>x</inf>O<inf>y</inf> thin films<inf>.</inf> - Some of the metrics are blocked by yourconsent settings
Item type:Publication, A tunable thermal switching device based on Joule heating-induced metal-insulator transition in VO2 thin films via an external electric field(2019-01-01); ; A solid state thermal switching device can regulate carrier transport by triggering of its critical transition temperature (T<inf>c</inf>) by applied external thermal energy. Continuous control of the T<inf>c</inf> of the thermal switch by the metal-insulator transition (MIT) phenomenon makes such devices widely usable. In this research, tunable thermal switching devices were fabricated, and characterization of the MIT in VO<inf>2</inf> thin film phase transition material was studied as a function of temperature and the external applied electric field. We observed reversible abrupt changes of the electrical resistivity by approximately three orders of magnitude at T<inf>c</inf> = 62.3 °C for VO<inf>2</inf> thin film on a SiO<inf>2</inf>/Si substrate. The MIT induced by the external electric field successfully controlled the T<inf>c</inf> of the thermal switch between 60 °C and 47 °C (as a linear relationship). We found that the Joule heating effect, rather than electric field breakdown, was a dominant mechanism due to the configuration of the device. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition(2023-06-01); ; ; This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb<inf>2</inf>O<inf>3</inf>:ZnO-ablating target. By increasing the content of Sb<inf>2</inf>O<inf>3</inf> (wt.%) in the target, Sb<sup>3+</sup> became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb<inf>2</inf>O<inf>3</inf>. The substituted Sb species in the Zn site (Sb<inf>Zn</inf><sup>3+</sup> and Sb<inf>Zn</inf><sup>+</sup>) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb–Zn complex defects (Sb<inf>Zn</inf>–2V<inf>Zn</inf>) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb<inf>2</inf>O<inf>3</inf> content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p–n junctions. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Electroreflectance study of antimony doped ZnO thin films grown by pulsed laser deposition(2021-10-01); ; In this research, antimony doped ZnO (SZO) thin films with various doping content have been grown on a c-Al<inf>2</inf>O<inf>3</inf> substrate by pulsed laser deposition. The effect of the applied electric field on the bandgap of SZO thin films was studied by electroreflectance (ER) spectroscopy using a capacitor-type geometry. Hall effect measurements indicate that the p-type conductivity of SZO is realized for the Sb<inf>2</inf>O<inf>3</inf> weight percentage at 2%. The blue shift of the energy bandgap was observed in thin films after increasing the doping concentration. The Burstein-Moss effect is the crucial mechanism for the blue shift of the SZO bandgap. Furthermore, we found the red shift of bandgap in all samples, which was measured under various electric fields by ER spectroscopy. The changes of the optical transition in the band structure should be the origin of the red shift behaviors of the SZO bandgap under the presence of the electric field. Based on our results, we can design and optimize the bandgap of SZO for optoelectronic devices. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Enhancement of sensing characteristics of Polydimethylsiloxane-based capacitive force sensor by introducing conductive polymer to dielectric layer(2021-01-01); ; ; Jessadaluk, SukittayaA capacitive force sensor is one of the electronics components used in several electronic devices and applications. An improvement of sensing characteristics of the sensor, for example sensitivity and response time, becomes an interesting research topic. The alternative approach to enhance the sensitivity and response time of polydimethylsiloxane-based capacitive force sensors is proposed by introducing poly(3,4-ethylenedioxythiophene) polystyrene sulphonate, a conductive polymer, into polydimethylsiloxane active layer. Two sensors using different active layers, (i) polydimethylsiloxane (conventional sensor) and (ii) poly(3,4-ethylenedioxythiophene) polystyrene sulphonate mixed polydimethylsiloxane (modified sensor), were fabricated and characterised to reveal the sensing enhancement. Interestingly, the modified sensor shows the significant increase in the sensitivity from 0.7 to 1.14 kPa<sup>–1</sup> (+62.86%) and the shortening response time from 1.55 to 0.43 s (−72.26%) with respect to the conventional sensor. In addition, the deterioration in elastic behaviour and the faster charge–discharge behaviour observed from the poly(3,4-ethylenedioxythiophene) polystyrene sulphonate mixed polydimethylsiloxane film indicate the better deformation and charge transport than that from polydimethylsiloxane film. Therefore, it can be concluded that the conductive poly(3,4-ethylenedioxythiophene) polystyrene sulfonate additive plays the role of mechanical and electrical modification of the polydimethylsiloxane active layer leading to the enhancement in sensitivity and response time of the polydimethylsiloxane-based capacitive force sensor.