Khemasiri, Narathon

Preferred name

Khemasiri, Narathon

Alternative Name

Khemasiri, N.

narathon.kh@kmitl.ac.th

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ZnO Nanorods Grown on Heterogenous Ag Seed Layers for Single-Cell Fluorescence Bioassays
(2021-07-23)
Muensri, Phitchaya
;
Treetong, Alongkot
;
Namdee, Katawut
;
Kasamechonchung, Panita
;
Wutikhun, Tuksadon
Here we demonstrate the controllability of the morphology of hydrothermal ZnO nanorods (ZnO-NRs) grown on heterogenous Ag seed layers. By varying the crystal orientation of silver thin films (Ag), a high density of ZnO-NRs could be obtained. We find that the density of ZnO-NRs strongly relates to the peak intensity ratio between (111) and (200) planes of Ag thin films due to a heteroepitaxy between (0002) ZnO and (111) Ag rather than that of grain boundary nucleation and/or surface nucleation. In addition, the optimized heterostructure of ZnO nanorod/Ag arrays is investigated via a critical concentration for nucleation and used as a fluorescence enhancement substrate (FES). The experimental results have shown that the FES presents an ability to detect a biological sample (PC-3 cell) with a high sensitivity and low detection limit of 1 cell/μL. Our results highlight that understanding an important key to control and design the morphology of heterogeneous hydrothermal ZnO-NR growth is essential to open up the opportunities for fundamental studies and applications in high-performance integrated nanodevices.
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Selective formations of antimony-dopant for highly sensitive nitrogen dioxide responsive behavior of tin oxide-based chemiresistive sensor
(2025-02-15)
Rattanawarinchai, Prapakorn
;
Khemasiri, Narathon
;
Rahong, Sakon
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Rangkasikorn, Adirek
;
Kayunkid, Navaphun
Here, selective formation of antimony (Sb) dopant species responsible for highly sensitive gas sensors based on tin oxide (SnO<inf>2</inf>) film grown via pulsed laser deposition is presented. By elevating a forming energy through controlling substrate temperature, not only crystallinity of Sb-SnO<inf>2</inf> (ATO) is notably enhanced but the Sb5 + also predominantly replace at Sn4+ site rather than Sb3+ counterpart. Such Sb-species selection plays a crucial role on the density of oxygen vacancy and free electron enabling to rationally design conductive behaviour of ATO film from insulative to degenerated semiconductor. As a practical example, detection of nitrogen dioxide (NO<inf>2</inf>) gas is selected as an application model. We found a narrow window for high NO<inf>2</inf> sensing performance of ATO film which strongly corresponds with the amount of carrier density. At certain window, ATO film exhibits high NO<inf>2</inf> response of 24.65 (10 ppm) and low limit of detection of 0.5 ppm, which is 5-fold higher and 10-fold lower than that of undoped-SnO<inf>2</inf>, respectively. Our finding demonstrates a facile approach to design over the chemical state, defect, and conductivity of the active sensing layer, allowing us to achieve an excellent sensing performance of functional materials conjugated to a nano-electronic platform.
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Influence of Antimony Species on Electrical Properties of Sb-Doped Zinc Oxide Thin Films Prepared by Pulsed Laser Deposition
(2023-06-01)
Jessadaluk, Sukittaya
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Khemasiri, Narathon
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Kayunkid, Navaphun
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Rangkasikorn, Adirek
;
Wirunchit, Supamas
This study systematically investigates the influence of antimony (Sb) species on the electrical properties of Sb-doped zinc oxide (SZO) thin films prepared by pulsed laser deposition in an oxygen-rich environment. The Sb species-related defects were controlled through a qualitative change in energy per atom by increasing the Sb content in the Sb<inf>2</inf>O<inf>3</inf>:ZnO-ablating target. By increasing the content of Sb<inf>2</inf>O<inf>3</inf> (wt.%) in the target, Sb3+ became the dominant Sb ablation species in the plasma plume. Consequently, n-type conductivity was converted to p-type conductivity in the SZO thin films prepared using the ablating target containing 2 wt.% Sb<inf>2</inf>O<inf>3</inf>. The substituted Sb species in the Zn site (Sb<inf>Zn</inf>3+ and Sb<inf>Zn</inf>+) were responsible for forming n-type conductivity at low-level Sb doping. On the other hand, the Sb–Zn complex defects (Sb<inf>Zn</inf>–2V<inf>Zn</inf>) contributed to the formation of p-type conductivity at high-level doping. The increase in Sb<inf>2</inf>O<inf>3</inf> content in the ablating target, leading to a qualitative change in energy per Sb ion, offers a new pathway to achieve high-performing optoelectronics using ZnO-based p–n junctions.
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Laser-induced graphene electrochemical immunosensors for rapid and sensitive serological detection: A case study on dengue detection platform
(2025-06-01)
Inlumphan, Supawee
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Wongwiriyapan, Winadda
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Khemasiri, Narathon
;
Rattanawarinchai, Prapakorn
;
Leepheng, Piyawan
Here, we present a diagnostic on a chip platform based on laser-induced graphene (LIG) electrochemical immunosensors for serological detection. The electrochemical immunosensors are fabricated through CO<inf>2</inf> laser induction on polyimide (PI) sheets. Optimal electrochemical activity of LIG electrodes is obtained under optimized conditions of laser fluence. To verify the application, the serological detection platform was demonstrated. After functionalization with dengue virus (DENV) antigen, the LIG electrochemical immunosensors are able to sense the presence of mouse anti-flavivirus monoclonal (4G2) antibody in a wide linear working range of 25–20,000 ng/ml with the limit of detection (LOD) of 17.41 ng/ml. A specific recognition with 4G2 antibodies against with media protein and isotype is confirmed. Furthermore, the reliability of LIG electrochemical immunosensors compared to conventional enzyme-linked immunosorbent assay (ELISA) is verified through the NS1 antibodies identification in human blood serum clinical samples at room temperature. Our results highlight that the LIG-based electrode is a promising platform for electrochemical immunosensors, aimed at developing reliable and practical diagnostic tools for serological detection. These tools enable early diagnosis of infectious diseases, as well as non-invasive and rapid screening.
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Systematic investigations on morphological properties of aluminum-doped zinc oxide transparent electrode prepared from pulsed laser deposition and its electrochromic application
(2023-03-01)
Khemasiri, Narathon
;
Klamchuen, Annop
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Jessadaluk, Sukittaya
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Rattanawarinchai, Prapakorn
;
Borklom, Punlapa
Transparent electrode (TE) is considered as one of the fundamental components in the optoelectronics. The surface of TE layer plays a crucial role in the charge-transport characteristics. Herein, a systematic investigation on the morphological properties of the laser-ablated aluminum-doped zinc oxide (AZO) films as a TE material prepared from various laser fluences is demonstrated. It is revealed that the electrical properties of AZO films are strongly associated with their surface properties rather than that of the bulk film. As the laser fluence increased, the concentration of Al-dopant in AZO films is decreased which directly impacts on the electrical properties. Such vanishment is originated from the bombardment of the incident particles/ions with excessive kinetic energy on film's surface during the deposition. Moreover, the optimized AZO film with low resistivity (1.13 × 10−3 Ω cm) and high optical transmittance (over 90%) achieved from controlling the laser fluence at 0.7 J/cm2 is employed as TE layer in the electrochromic device. Our results highlight that the surface properties of TE layer are very critical for electronic performance.
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Rational concept for fully designing metal-oxynitride films through reactive gas-timing magnetron sputtering: A case study on zinc oxynitride film
(2025-08-10)
Khemasiri, Narathon
;
Chananonnawathorn, Chanunthorn
;
Horprathum, Mati
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Pornthreeraphat, Supanit
;
Saekow, Bunpot
Amorphous metal-oxynitride films—particularly zinc oxynitride (ZnON)—are emerging as promising materials for next-generation high-speed switching electronics, due to the absence of a potential barrier above the conduction band, unlike metal-doped ZnO. However, conventional reactive magnetron sputtering often face challenges in precisely controlling in an anion ratio, N/(N + O), because of the different reactivities of nitrogen and oxygen gases. In this work, we present a strategy to precisely control both the crystal structure and N/(N + O) ratio in ZnON films using a reactive gas-timing technique. By adjusting the oxygen gas-timing sequence (t<inf>O₂</inf>), we selectively induce different crystalline phases, which are closely related to the nitridation and oxidation of the sputtered Zn atom/cluster. This technique facilitates effective N incorporation into ZnO, enabling a broad range of N/(N + O) ratios from 0.048 to 0.964 and optical band gap variations from 1.49 eV to 3.22 eV. At an optimal t<inf>O₂</inf>, an amorphous phase is formed, attributed to a balanced nitridation and oxidation rate of the sputtered Zn atom/cluster that suppresses crystallization. The resultant amorphous ZnON film exhibits a high carrier mobility of 84.81 cm²/Vs, which is 1.16-fold and 35.89-fold greater than those of the cubic and hexagonal ZnON films, respectively. Our findings highlight the effectiveness of the reactive gas-timing technique as a powerful tool for the rational design of metal-oxynitride films, paving the way for their application in advanced electronic devices.
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Reusability, Long-Life Storage and Highly Sensitive Zirconium Nitride (ZrN) Surface-Enhanced Raman Spectroscopy (SERS) Substrate Fabricated by Reactive Gas-Timing Rf Magnetron Sputtering
(2023-12-22)
Sucheewa, Nguentra
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Wongwiriyapan, Winadda
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Rattanawarinchai, Prapakorn
;
Wuttikhun, Tuksadon
;
Sinthiptharakoon, Kittiphat
Transition metal nitrides (TMN) are promising material alternative to replace noble metals in the field of plasmonic applications, especially surface-enhanced Raman spectroscopy (SERS). Here we demonstrate a practical surface enhanced Raman spectroscopy (SERS) substrate using zirconium nitride (ZrN) thin films grown by reactive gas-timing (RGT) rf magnetron sputtering. The tailored properties of ZrN thin film exploited for SERS activity could be achieved to obtain a highly sensitive ZrN thin film SERS substrate with the enhancement factor (EF) of 1.24 × 106 and 4.8 %RSD at 1626 cm-1 toward methylene blue (MB) analyte which are comparable to the optimized Au sputtered thin films (EF=1.18 × 106 and with 5.1%RSD). We find that the spatial plasmonic hotspots on the surface of ZrN SERS substrate controlled by the turn-on timing of Ar:N2 sputtered gas sequence, leading to the discrete conductive surface profile, strongly relates to non-stoichiometric composition and the degree of (200)-oriented texture at the surface of ZrN thin film. Furthermore, ZrN thin film SERS substrates exhibit an excellent recyclability more than 30 cycles with simple cleaning process and a storage time longer than 6 months. The detection and reusability of ZrN SERS substrate on the low concentration of trinitrotoluene (TNT) for homeland security are also performed.

Khemasiri, Narathon

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