Atiwongsangthong, Narin
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Preferred name
Atiwongsangthong, Narin
Alternative Name
Atiwongsangthong, N.
Main Affiliation
Email
narin.at@kmitl.ac.th
8 results
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Item type:Publication, Carrier lifetime of platinum doped P-N diode after irradiation by soft X-ray(2013-08-30) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Porous Silicon Formation by Stain Etching on Pyramid Surface in U-Shape MSM Photodetector(2024-01-01); ; - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Defects study by activation energy profile for lowering leakage current in p-n junction(2011-01-01); Niemcharoen, SurasakDiode leakage current consists of diffusion (I<inf>d</inf>) and generation current (I<inf>g</inf>), which is strongly sensitive to the residual defect density. These defects can be studied by activation energy (E<inf>a</inf>). Therefore, this paper presents a method for calculating activation energy of silicon p-n junctions from volume generation current. It combines temperature-dependent current-voltage (I -V) and capacitance- voltage (C-V) measurements of diodes. The I<inf>g</inf> can be found from the volume leakage current by subtraction of the volume diffusion current, which is calculated while the depletion width is zero. The activation energy (E<inf>a</inf>) is derived from slope of an Arrhenius plot of I<inf>g</inf>. To derive the correct slope the temperature dependence of the depletion width, which is obtained from the corrected volume capacitance has been applied. The E<inf>a</inf> profile below junction has been shown. The lower E<inf>a</inf> value has been found near the junction, which may relate to the junction implantation. © (2011) Trans Tech Publications. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Alcohol vapor detection by using nanoporous silicon as based sensor(2013-01-01); Niemcharoen, SurasakIn this paper, we are concerned with fabrication of alcohol vapor sensor based on nanoporous silicon. In order to use nanoporous silicon as alcohol vapor sensor, we made nanoporous silicon onto p-type silicon wafer by electrochemical etching of silicon wafer in hydrofluoric acid solution. The structure of this sensor consists of nanoporous silicon layer and aluminum electrode which is deposited on the top of nanoporous silicon layer by evaporator. In this research, we are concerned the variation of electrical properties of this sensor due to presence of different concentration of alcohol vapor. From the experiment, it is found that this sensor can detect the different concentrations of alcohol vapor in the rang 1000 ppm to 250 ppm. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Extraction of mobility degradation, effective channel length and total series resistance of NMOS at elevated temperature(2011-08-12); This article describes the extraction of total series resistance, effective channel length and low field effective channel mobility degradation parameter at temperature in the range of 25°C-125°C of NMOS device. The relation of I<inf>DS</inf> and V<inf>GS</inf> in a linear region was used with a different of channel length. The procedure is based on the measurement of the transconductance characteristics of MOSFET in the linear region. The transconductance characteristics is determine for the several devices of difference drawn channel length. The results shows that, the effective channel length is increased in a range of 5×10<sup>-10</sup> m/°C. The low field mobility degradation parameter is decreased by the factor of 0.733. The total series resistance is increased in the range of 1.4 Ω-μm/°C. The errors between the predicted model and measured of I<inf>DS</inf>&V <inf>GS</inf> in linear region is approximately 3%. © 2011 IEEE. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Fabrication, characterization and analysis of ITO/n-Si Schottky photodetector(2010-07-30); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Photocurrent enhancement between two coplanar schottky-barriers on silicon MSM photodetector(2013-06-03); Niemcharoen, SurasakGain properties of dc and ac photocurrent generated between two Schottky barriers coplanarly placed on silicon metal-semiconductor-metal photodetector have been investigated experimentally. The test structure has two square Mo/n-Si Schottky barrier junctions on an n-type silicon substrate with a resistivity of 9-12 Ω-cm and the junction internal separation is 20μm. The current-voltage (I-V) characteristics under illumination in visible range showed a rapid increase in the photocurrent at higher bias region. From the I-V characteristics and noise measurements, increase in photocurrent was ascribed to avalanche multiplication of carriers photogenerated in the reverse-biased Schottky junction. From observation of optical signal demodulation at low frequencies (10 kHz and 50 kHz), it was found that multiplication factor larger than 100 at 10 kHz and 30 at 50 kHz was achieved respectively. © (2013) Trans Tech Publications, Switzerland. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Application of nanoporous silicon for a metal-semiconductor-metal visible light photodetector(2011-01-01);