Pecharapa, Wisanu
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Preferred name
Pecharapa, Wisanu
Alternative Name
PECHARAPA, Wisanu
Pecharapa, W.
Main Affiliation
Email
wisanu.pe@kmitl.ac.th
6 results
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Item type:Publication, Growth and characterization of novel optoelectronic materials. Based on II-VI inorganic/organic heterostructures(2006-01-01); ; ; Novel optoelectronic materials based on II-VI inorganic/organic low-dimensional heterostructure were successfully grown by electron beam evaporator. The structures were based on ZnSe, tris(8-hydroxyquinoline) aluminum (Alq<inf>3</inf>) and N,N'-bis(3-methylphenyl)-N,N'-diphenyl-benzidine (TPD). The surface morphology of the structures was investigated by atomic force microscopy and field emission scanning electron microscope. The optical and electronic properties were examined by photoluminescence, photocurrent and electroreflectance spectroscopy. Photoluminescence spectra of the ZnSe/Alq <inf>3</inf>/ZnSe structure attributed to the change of exciton energy as a result of quantum confinement showed the formation of single quantum well structure. The luminescence color can be varied by changing the thickness of the Alq<inf>3</inf> layer. The other heterostructure of ZnSe/Alq<inf>3</inf>/TPD was grown on silicon substrate. The wavelength response of this structure shown by photocurrent signal ranged from 450 nm to 1100 nm. Electroreflectance features due to optical transition energy of the single quantum well of this structure were also observed. Under applied voltage, electroreflectance signals showed significant shift due to the quantum confined Stark effect. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Electroreflectance and photocurrent measurement of ZnSe/Alq 3/TPD heterostructure on Si-substrate(2005-11-20); ; ; The optical transition energy in ZnSe/tris(8-hydroxyquinoline) aluminum (Alq<inf>3</inf>)/N,N′-bis(3-methylphenyl)-N,N′-diphenyl-benzidine (TPD) heterostructure were investigated by room-temperature electroreflectance (ER) and photocurrent (PC) measurements. PC signal showed wavelength response of the device in the range of 450-1100 nm. ER features due to optical transition energy of the single quantum well of this structure were observed. The transition energies were determined by fitting the ER spectra to the theoretical line-shape expression. The subband transition energy decreased with increasing well thickness. Under applied voltage, both ER signals show significant shift due to the quantum confined Stark effect. © 2005 Elsevier B.V. All rights reserved. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Temperature dependent photoluminescence of ZnSe/Alq3 hybrid heterostructure(2008-12-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Influence of gas source supply interruption on quantum well structure of few monolayer InP/In0.53Ga0.47As/InP grown by OMVPE(2002-01-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Photocurrent study of erbium delta-doped InP grown by organometallic vapor phase epitaxy(2002-11-20); The photocurrent of erbium delta-doped InP grown by organometallic vapor phase epitaxy was observed at room temperature. The clear PC spectra of the doped samples reflect the high quality formation of ErP quantum structure in InP. The PC spectra of doped samples with different Er exposure duration show that the total number of ErP islands increase with increasing exposure time, reflected in the sharper PC spectra. When applying an electric field, the spectra of the doped sample exhibit significant shift with increasing field. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Shooting method calculation of temperature dependence of transition energy for quantum well structure(2008-05-15); Techitdheera, WicharnThe ground state transition energy as various temperatures of a single quantum well structure has been calculated. The numerical technique called shooting method was developed to get eigen values and eigen functions. Pässler's model and Aspnes's equation are adopted to calculate the energy gap(Eg) of Al <inf>0.3</inf>Ga <inf>0.7</inf>AS and GaAs respectively. Our calculation has been tested by comparing the results to PL experimental data of Al <inf>0.3</inf>Ga <inf>0.7</inf>As/GaAs single quantum well. Good agreement has been found in the low temperature range (less than 40 K) and fair result has been obtained in the range of temperature higher than 40 K.