Nukeaw, Jiti

Preferred name

Nukeaw, Jiti

Alternative Name

Nukeaw, J.

Nukeaw, Jitti

Nukeaw, Jiji

Main Affiliation

Integrated Innovative Technology

jiti.nu@kmitl.ac.th

Now showing 1 - 8 of 8

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Silicon nitride thin films deposited by reactive gas-timing magnetron sputtering for protective coating applications
(2015-01-01)
Khemasiri, N.
;
Paleeya, N.
;
Sae-tang Phromyothin, D.
;
Horprathum, M.
;
Porntheeraphat, S.
Silicon nitride is a promising alternative to carbon based materials for protective coatings, owing to its compatibility with existing silicon-based microfabrication. The complexity of the fabrication processes and contaminations hamper fine-tuning to obtain desirable coating properties. We have explored the reactive gas-timing rf plasma sputtering technique for silicon nitride thin film deposition as an alternative method to fine-tune the film properties. The gas-timing technique controls the on-off sequence of the sputtering gas (Ar) and the reactive gas (N<inf>2</inf>) during deposition. We focus this investigation to the effect of the Ar:N<inf>2</inf> gas timing ratio (10:0, 10:1, 10:3, 10:5, 10:7 and 10:10) on the composition, the morphology, the corrosion resistance, and the hardness properties of the films, in comparison to the films deposited by conventional reactive sputtering with Ar-N<inf>2</inf> gas mixture. These deposited silicon nitride films were characterized by Auger electron spectroscopy, Raman spectroscopy, and atomic force microscopy. The chemical resistance was measured by the electrochemical corrosion test in sulfuric acid, while the hardness properties were obtained by nanoindentation. The results reveal that although the nitrogen content in the films increases only slightly when the N<inf>2</inf> timing is prolonged, the corrosive current of the films decreases abruptly. A thin passivating oxidized layer is found to play a major role in the corrosion resistance. In contrast, the hardness properties exhibit a uniform variation with the N<inf>2</inf> timing. The gas-timing sequence may induce morphological changes the underlying silicon nitride films. The highest hardness obtained by the gas-timing technique almost doubles that produced by the conventional mixed gas sputtering. Thus the reactive gas-timing technique suggests a new route to selectively control the properties of silicon nitride films with minor modification to existing microfabrication processes.
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Local structure investigation of indium oxynitride thin films by X-ray absorption fine structure
(2010-05-05)
Amnuyswat, Kittiphong
;
Thanomngam, P.
;
Sopitpan, S.
;
Sungthong, A.
;
Porntheeraphat, S.
Indium Oxynitride (InON) thin films prepared by Reactive gas-timing RF magnetron sputtering technique are investigated using X-ray absorption fine structure and first principle calculation. It was found from the former study[2] that optical and electrical properties of these films highly depended on its gas-timing ratio in the sputtering process. Therefore structural investigations of these films are required in order to describe the relation between the gas-timing ratio and their optical properties. The results show that local structure of the InON thin films consist of both indium oxide (In <inf>2</inf>O<inf>3</inf>) and indium nitride (InN) phase. ©2010 IEEE.
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Investigation of oxygen contamination in indium nitride thin film by x-ray absorption fine structure
(2010-02-05)
Amnuyswat, K.
;
Thanomngam, P.
;
Sopitpan, S.
;
Sungthong, A.
;
Porntheerapat, S.
Local structures of indium oxynitride (InON) nano-crystal prepared by reactive gastiming RF magnetron sputtering technique are under investigation. Since the optical properties of these InON thin films depend on gas-timing ratio, the local structure analysis is needed in order to determine the relation between the gas timing ratio and its optical properties. In this work, InON thinfilm with 30:0 seconds (N<inf>2</inf>:O<inf>2</inf>) gas-timings ratio was analyzed for its local structure using X-ray absorption fine structure (XAFS) technique in conjunction with first principle calculation. The results indicate that the crystal structure of the film is wurtzite structure which is a typical structure of InN. However from the results of Auger Electron Spectroscopy (AES), there are oxygen contents in the film. Since XAFS analysis confirmed the 4-fold local structure of Indium atom, these oxygen atoms must be substituted in nitrogen sites with slightly changing the local structure of Indium atom. The best fit of XAFS data indicated that there is an oxygen atom substituted in nitrogen site of the 4-fold indium. © (2010) Trans Tech Publications.
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Local structure of indium oxynitride from x-ray absorption spectroscopy
(2008-09-22)
Thienprasert, J. T.
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Nukeaw, J.
;
Sungthong, A.
;
Porntheeraphat, S.
;
Singkarat, S.
Synchrotron x-ray absorption near edge structures (XANES) measurements of In L3 edge is used in conjunction with first principles calculations to characterize rf magnetron sputtered indium oxynitride at different O contents. Good agreement between the measured and the independently calculated spectra are obtained. Calculations show that the XANES spectra of this alloy are sensitive to the coordination numbers of the In atoms, i.e., fourfold for indium nitride-like structures and sixfold for indium oxide-like structures, but not to the substitution of nearest neighbor N by O or vice versa. © 2008 American Institute of Physics.
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An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering
(2008-09-30)
Sungthong, A.
;
Porntheeraphat, S.
;
Poyai, A.
;
Nukeaw, J.
The indium oxynitride (InON) films were achieved by reactive RF magnetron sputtering indium target which has the purity of 99.999% with a novel reactive gas-timing technique. The structural, optical and electrical properties in a series of polycrystalline InON films affected by gas-timing of reactive N <inf>2</inf> and O <inf>2</inf> gases introduced to the chamber were observed. The X-ray photoelectron spectroscopy revealed that the oxygen content in thin films that compounded to indium and nitrogen, which increased from 10% in indium nitride (InN) to 66% in indium oxide (In <inf>2</inf> O <inf>3</inf> ) films. The X-ray diffraction peaks show that the phase of deposited films changes from InN to InON and to In <inf>2</inf> O <inf>3</inf> with an increasing oxygen timing. The hexagonal structure of InN films with predominant (0 0 2) and (0 0 4) orientation was observed when pure nitrogen is only used as sputtering gas, while InON and In <inf>2</inf> O <inf>3</inf> seem to demonstrate body-center cubic polycrystalline structures depending on gas-timing. The surface morphologies investigated from atomic force microscope of deposited films with varying gas-timing of O <inf>2</inf> :N <inf>2</inf> show indifferent. The numerical algorithm method was used to define the optical bandgap of films from transmittance results. The increasing oxygen gas-timing affects extremely to the change of crystallinity phase from InN to InON and to In <inf>2</inf> O <inf>3</inf> , the increase of optical bandgap from 1.4 to 3.4 eV and the rise of sheet resistance from 15 Ω/□ to insulator. © 2008 Elsevier B.V. All rights reserved.
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Very low drift and high sensitivity of nanocrystal-TiO 2 sensing membrane on pH-ISFET fabricated by CMOS compatible process
(2013-02-15)
Bunjongpru, W.
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Sungthong, A.
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Porntheeraphat, S.
;
Rayanasukha, Y.
;
Pankiew, A.
High sensitivity and very low drift rate pH sensors are successfully prepared by using nanocrystal-TiO <inf>2</inf> as sensing membrane of ion sensitive field effect transistor (ISFET) device fabricated via CMOS process. This paper describes the physical properties and sensing characteristics of the TiO <inf>2</inf> membrane prepared by annealing Ti and TiN thin films that deposited on SiO <inf>2</inf> /p-Si substrates through reactive DC magnetron sputtering system. The X-ray diffraction, scanning electron microscopy and Auger electron spectroscopy were used to investigate the structural and morphological features of deposited films after they had been subjected to annealing at various temperatures. The experimental results are interpreted in terms of the effects of amorphous-to-crystalline phase transition and subsequent oxidation of the annealed films. The electrolyte-insulator-semiconductor (EIS) device incorporating TiON membrane that had been obtained by annealing of TiN thin film at 850 °C exhibited a higher sensitivity (57 mV/pH), a higher linearity (1), a lower hysteresis voltage (1 mV in the pH cycle of 7 → 4 → 7 → 10 → 7), and a smaller drift rate (0.246 mV/h) than did those devices prepared at the other annealing temperatures. Furthermore, this pH-sensing device fabrication process is fully compatible with CMOS fabrication process technology. © 2012 Elsevier B.V. All rights reserved.
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Chemical characterization and electrical properties of indium oxynitride grown by reactive gas-timing RF magnetron sputtering
(2010-02-05)
Sungthong, A.
;
Khomdet, P.
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Porntheeraphat, S.
;
Hruanun, C.
;
Poyai, A.
This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O<inf>2</inf>:N<inf>2</inf> timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E<inf>1</inf>(TO) at ∼470 cm<sup>-1</sup> and E<inf>1</inf>(LO) at ∼570 cm<sup>-1</sup> and also shifted with different O<inf>2</inf>:N<inf>2</inf> timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O<inf>2</inf>:N <inf>2</inf> timing is increased. © (2010) Trans Tech Publications.
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XAFS analysis of indium oxynitride thin films grown on silicon substrates
(2013-01-01)
Amnuyswat, K.
;
Saributr, C.
;
Thanomngam, P.
;
Sungthong, A.
;
Porntheeraphat, S.
Local structure of indium oxynitride thin films grown on silicon substrates was investigated by X-ray absorption fine structure technique incorporated with first principle calculations. The thin films were grown by using reactive gas timing radio frequency (RF) magnetron sputtering technique with nitrogen (N<inf>2</inf>) and oxygen (O<inf>2</inf>) as reactive gasses. The reactive gasses were interchangeably fed into sputtering system at five different time intervals. The gas feeding time intervals of N<inf>2</inf>:O<inf>2</inf> are 30:0, 30:5, 30:10, 30:20 and 10:30s, respectively. The analysis results can be divided into three main categories. Firstly, the films grown with 30:0 and 30:5s gas feeding time intervals are wurtzite structure indium nitride with 25 and 43% oxygen contaminations, respectively. Secondary, the film grown with 10:30s gas feeding time intervals is bixbyite structure indium oxide. Finally, the films are alloying between indium nitride and indium oxide for other growth condition. The fitted radial distribution spectra, the structural parameters and the combination ratios of the alloys are discussed. © 2012 John Wiley & Sons, Ltd.

Nukeaw, Jiti

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