Riewruja, Vanchai
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Riewruja, Vanchai
Alternative Name
Riewruja, V.
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vanchai.ri@kmitl.ac.th
14 results
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Item type:Publication, CMOS-based integrable electronically tunable floating general impedance inverter(1997-01-01); Surawatpunya, CharrayAn integrable electronically tunable general impedance inverter (EGII), implemented by a MOS circuit design technique, is described. The driving point impedance of the EGII, that is inversely proportional to a given impedance, can be a positive or a negative value and can be electronically varied. The realization scheme employs proposed voltage-to-current transducers (VCTs) that are designed based on a linearizing technique, as basic circuit building blocks. The applications of the EGII as a gyrator, a general impedance converter and a floating capacitance multiplier are discussed. Experimental and simulation results that demonstrate the characteristics of the EGII are included. © 1997 Taylor and Francis Group, LLC. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Integrable CMOS-base realization of current conveyors(1991-01-01); Cheevasuvit, FusakSimple integrable circuits for implementing both positive and negative second generation current conveyors (CCII) are described. The realization method is suitable for fabrication using CMOS technology. Simulation and experimental results demonstrating the characteristics of the method are also included. © 1991 Taylor & Francis, Ltd. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, A class AB CMOS square-rooting circuit(1998-01-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, An accurate CMOS differential voltage-to-current converter(1994-01-01); Surawatpunya, C.A technique for implementing a differential voltage-to-current converter that is suitable for fabrication in CMOS technology is presented. The transconductance of the converter is determined by an external resistor. Very linear and accurate transconductance is obtained with a conversion error of 0-012% for an external resistance of 25 Ω. Simulation results are given to show the linearity and accuracy of the conversion circuit. The voltage-to-current converter is a versatile building block and can be applied as a current conveyor, a floating inductance, a floating negative impedance converter and an instrumentation amplifier. © 1994 Taylor & Francis Ltd. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, An integrable current-mode root-n circuit(1999-12-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The MIIS structure capacitor fabricated with high permittivity material(1999-01-01); ; Titiroongruang, W.The MIIS (Metal Insulator Intrinsic Semiconductor) structure capacitor consists of the aluminum, ZnO insulator and n-Type silicon doped with gold atoms. The different electrical characteristics of the devices from the standard MOIS (Metal Oxide Intrinsic Semiconductor) structure capacitor which is fabricated from SiO<inf>2</inf> are presented in this paper. The experimental results show that the threshold voltage of the devices (V<inf>TO</inf>) is smaller than the MOIS devices, the zinc oxide capacitor values (C<inf>OX</inf>) are higher but the total capacitor value (C<inf>T</inf>) of the device does not change. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Inductance simulation using GaAs MESFETs(1998-12-01); ; Dumawipata, TeerasilapaThis paper proposes a method for an inductance simulation by using GaAs MESFET (Gallium Arsenide MEtal Semiconductor Field-Effect Transistor) devices. The realization method is based on the use of a GaAs voltage-to-current transducer and is also suitable for implementing in monolithic integrated circuit form. The circuit has wide bandwidth, good linearity and the simulated inductive reactance value is a linear function of resistor and capacitor. The PSPICE simulation results show that the properties of the circuit are in close agreement with the theoretical prediction. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Integrable CMOS sinusoidal frequency doubler and full-wave rectifier(1992-01-01) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Temperature compensation of translinear current conveyor and OTA(1998-04-16); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Accurate CMOS-based Current Conveyors(1991-01-01);