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Removing the transients electron trapping in P-N junction diode by using soft X-ray annealing method
(2014-01-01)
Ueamanapong, Surada
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Srithanachai, Itsara
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Niemcharoen, Surasak
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Poyai, Amporn
This paper describes a transient phenomenon in the reverse current of P-N junctions giving rise to a hump at a specific reverse bias. P-N diode as been fabricated by a deep boron ion implantation (120 keV) and a junction depth around 4 μm is expected. Ion implantation can cause defect in silicon substrate even if the device was cured by annealing process, the defect or its effect is still remained. I-V characteristic has been acquired from -10 V to 0 V in temperature variation of 30-80°C. At the specific condition of -3 V, 80°C humps occurred on the curve and when the device was exposed to X-ray at energy of 40, 55 and 70 keV. The humps were then shifted toward 0 V. Activation energy has been calculated in order to give an insight into the device characteristics. It revealed the presence of a non-uniform density of electron traps corresponding to a broad range of energy levels from about 0.65-0.67 eV above the intrinsic band. This report shows an interesting phenomenon of the deep P-N junction diode modified by X-ray irradiation. Copyright © 2014 Inderscience Enterprises Ltd.
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Improving the forward current of P-N diode using soft X-ray annealing method
(2013-12-31)
Ueamanapong, Surada
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Srithanachai, Itsara
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Suwanchatree, Ai Lada
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Niemcharoen, Surasak
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Klunngien, Nipapan
This paper presents a new result to improve the performance of P-N diode. The P-N diodes are fabrication using CMOS technology at TMEC. Electrical characteristics of P-N junction diode can be analyzed by current-voltage (I-V) measurement. This paper investigates X-ray irradiation by its electrical characteristics of difference X-ray exposure time. The X-ray energy use to expose 55 and 70 keV various time in the range 5-205 sec of exposure. After X-ray irradiation the forward current are increased about 3-4 orders. The series resistance and recombination lifetime are main factor for describe the change of forward current. Series resistance after X-ray irradiation with 55 and 70 keV are decreased from 10 k to 5, which show that the device performance of diode are increased after X-ray irradiation. While the recombination lifetime are decreased from 55 to 48 μsec and 52 to 45 μsec at 55 and 70 keV, respectively. From the results show that soft X-ray annealing is very important to semiconductor industry. © 2013 IEEE.
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Light-response characteristics of platinum doped silicon photodetector
(2013-11-04)
Nararug, Budsara
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Ueamanapong, Surada
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Srithanachai, Itsara
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Janprapha, Supakorn
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Suwanchatree, Ai Lada
The purposeof this research article is present electrical characteristic of Pt-doped silicon photodetector compare with undoped silicon photodetector. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Pt-doped detector were investigated. In this experiment, the results of Pt-doped detector show that the dark currentisobviously decreased and the photocurrent is decreased about 9 to 10 orders. Furthermore, the capacitance characteristic isslightly increased about 0.15 pF. The effects platinum on silicon indicated the carrier in silicon have been changed. © (2013) Trans Tech Publications, Switzerland.
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The effect of X-ray irradiation on the electrical properties of pt-doped P-N diode
(2013-08-30)
Janprapha, Supakorn
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Srithanachai, Itsara
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Ueamanapong, Surada
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Khunkhao, Sunya
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Thongnak, Thanawat
This paper presents the effect of X-ray irradiation on the electrical properties of Pt-doped P-N diode with X-ray energy 70 keV for 205 seconds. The results show that the radiation affected both reverse and forward current characteristics of P-N diode. The forward current is increased about 3 orders after radiation, while the leakage current is increased slightly after irradiation. Moreover, build-in voltage value is also changed after irradiation. The cause of parameters changing can be analyzed from carrier lifetime and series resistance. It can be seen clearly that Xray irradiation technique are significant and can be used to improving electronic devices. © (2013) Trans Tech Publications Switzerland.
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Study on schottky diode characteristics improving by X-ray irradiation
(2013-08-30)
Klinsanit, Sani
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Srithanachai, Itsara
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Ueamanapong, Surada
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Khunkhao, Sunya
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Nararug, Budsara
The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode. © (2013) Trans Tech Publications Switzerland.
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Carrier lifetime of platinum doped P-N diode after irradiation by soft X-ray
(2013-08-30)
Nararug, Budsara
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Srithanachai, Itsara
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Ueamanapong, Surada
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Khunkhao, Sanya
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Janprapha, Supakorn
This paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τ<inf>g</inf>) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed. © (2013) Trans Tech Publications Switzerland.
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X-ray soft annealing process study for p-n junction diode
(2013-08-01)
Rujanapich, Poopol
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Poyai, Amporn
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Srithanachai, Itsara
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Ueamanapong, Surada
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Titiroongruang, Wisut
The effect of X-ray soft annealing on the electrical properties of p-n junction diodes has been investigated. Under a forward bias of 1.0 V at 303 K, the forward current is approximately two orders of magnitude higher for X-ray annealed than for non-X-ray annealed samples. This effect is further investigated by evaluating the following properties under forward-bias conditions: ideality factor, saturation current, activation energy, series resistance, under reverse-bias conditions, carrier-generation lifetime, and activation energy. Results suggest that X-ray soft annealing improves the electrical properties of p-n junction diodes under forward-bias conditions.
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Enhanced silicon bandgap by platinum diffusion for UV detector
(2013-03-01)
Ueamanapong, Surada
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Srithanachai, Itsara
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Atiwongsangtong, Narin
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Klunngien, Nipapan
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Poyai, Amporn
This research article proposes a new method that enables silicon to respond to light in the UV wavelength range by doping Platinum (Pt), which is an impurity atom, into silicon. It is widely recognized that silicon semiconductor can respond to visible light. Silicon photodetector can thus detect merely the light with wavelengths of visible light and near IR. The effect of Pt on photocurrent of a metal-semiconductor-metal (MSM) photodetector was investigated. The undoped and Pt-doped silicon photodetectors in this experiment were fabricated to test the current characteristics. It was found that Pt-doped photodetectors can respond to the light wavelength of 365 nm. The energy bandgap (E<inf>g</inf>), a parameter related to the optical response of semiconductor, of Pt-doped silicon was obtained by extracting from Arrhenius plot of generation current of silicon p-n junction. The result was shown that E<inf>g</inf> of Pt-doped silicon is increased with the introduction of Pt. E<inf>g</inf> of silicon is typically 1.12 eV; however, the E<inf>g</inf> in this study is approximated at 1.7 eV. © 2013 American Scientific Publishers All rights reserved.
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An improvement of forward current of P-N diode using soft X-ray method
(2013-02-01)
Rujanapich, Poopol
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Srithanachai, Itsara
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Ueamanapong, Surada
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Poya, Amporn
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Niemcharoen, Surasak
We present the experimental investigation of platinum doped P-N junction diodes that they were fabricated by using a CMOS technology. The effect of soft X-ray annealing technique on the device is investigated and the device performance improvement observed. The current-voltage (I-V) characteristics of the diodes were measured at room temperature. The forward current before and after irradiation can be explained relatively to the carrier recombination lifetime (τ<inf>r</inf>). After irradiation, at 55 and 70 keV for 55 and 205 seconds, the small change in leakage current is noted. However, the forward current is increased by several orders of magnitude. The carrier recombination lifetime was the main effects of the change in forward current. The recombination lifetimes after irradiation are decreased from 0.55μ??s to 0.45μs and 0.55μs to 0.48μs, which show that the device performances are sed after X-ray irradiation. Soft X-ray annealing is a new technique for improve the device performance. © 2013 American Scientific Publishers All rights reserved.
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Particle accelerator using optical tweezer for photodetector performance improvement
(2012-12-04)
Daud, Suzairi
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Ueamanapong, Surada
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Srithanachai, Itsara
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Poyai, Amporn
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Niemcharoen, Surasak
A photodetector performance improvement technique using a particle accelerator in the modified add-drop optical filter is proposed. An optical tweezer is used to control the electron movement within the device, where an electron (particle) can be accelerated and moved faster than the normal condition, where finally the silicon bulk defects and diode performance degradation can be solved. In simulation, a PANDA microring is configured by a modified add-drop filter that can be used to increase the electron speed. In operation, the trapped electrons in a diode can be trapped, controlled, and transported from anode to cathode contacts. In the design system, the trapping probe can be adjusted to fit the atom size from 200pm (picometer) to 1.4nm (nanometer) by controlling the ring parameters. The goal of this paper is to present the use of a PANDA microring for photodetector performance improvement, which can be used for many applications. © 2012 IEEE.

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