Pengchan, Weera
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Preferred name
Pengchan, Weera
Alternative Name
Pengchan, W.
Main Affiliation
Email
weera.pe@kmitl.ac.th
3 results
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Item type:Publication, Extraction of defect in doping silicon wafer by analyzing the lifetime profile method(2008-01-01); ; Poyai, A.The total leakage current in silicon p-n junction diodes compatible with 0.8 μm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density. © 2008 Trans Tech Publications, Switzerland. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Yield analysis by poisson yield model based on the defect analysis with derivative method(2014-01-01); ; Poyai, A.This paper presented the corresponding between the classical Poisson's yield equation prediction and wafer actual yield on the silicon wafer with 0.8 μm CMOS technology. The defect analysis with derivative method, current - voltage and capacitance-voltage of diode characteristic measurement, is used to define the defect in p-n junction on silicon wafer. The different sampling numbers of chips are used to calculate the yield. Finally the calculated data and actual would be compared and found that at sampling number is 25, the tolerance from actual yield is less than 2%. © 2014 IEEE. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The new design for magnetoresistance effect on hall plate structure(2012-10-02); ;