Pengchan, Weera
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Preferred name
Pengchan, Weera
Alternative Name
Pengchan, W.
Main Affiliation
Email
weera.pe@kmitl.ac.th
7 results
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Item type:Publication, The defects analysis in CMOS fabrication by arrhenius activation energy technique(2011-10-04); ; Poyai, AmpornLow power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n junction. Among variety process steps, implantation step may generate defects. Therefore, the implantation-induced defects have been studied from the activation energy which has been obtained from the leakage current of p-n junction. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The current-voltage (I-V) and high frequency capacitance-voltage (C-V) characteristics of p-n junctions with temperature dependence have been measured. The electrically active defects from implantation process can be extracted from the junction generation current density versus temperature. Base on this analysis, it will be demonstrated that the implantation-induced defects have been found in p<sup>+</sup>-n-well more than in n<sup>+</sup>-p-substrate. Finally, the possible nature of the defect will be discussed. © 2011 IEEE. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Power loss analysis based on leakage currentin PN junctions(2013-10-04); ; Poyai, AmpornThis paper is proposed to analyze the power loss from leakage current in p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard 0.8 micron CMOS technology. The diode fabricated by the ion implantation process with two different condition. The reverse current and voltage (I-V)characteristics at varied temperature of p-n junctions have been measured. The power loss coefficient can be extracted from the leakage current versus temperature. Form the derivative of leakage current with temperature, the power loss with prediction trend curve can be obtained. © (2013) Trans Tech Publications, Switzerland. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effect of base width and implantation dose on performance of 3-terminal magnetotransistor(2007-12-01); ; Klunngien, NipapanThis paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (F<inf>L</inf>) from magnetic field. The structure of magnetotransistor is designed like a structure of a PNP bipolar junction transistor which comprises of 3 terminals, i.e., emitter, collector and base. The base width (L) is varied (10, 20 and 30 μm) where the spacing between collector and base is fixed at 40 μm. The emitter and collector regions are doped with boron (BF <inf>2</inf>) at the dose of 3×10<sup>15</sup>, 5×10<sup>15</sup> and 1×10<sup>16</sup> ions/cm<sup>2</sup>. It is found that the sensitivity is increased when increasing L and the implantation dose. It is also demonstrated that the linear relationship between the output voltage of the magnetotransistor circuit and magnetic field can be obtained. © 2007 IEEE. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The local generation and recombination lifetime based on forward diode characteristics diagnostics(2013-01-01); ; Poyai, AmpornThis paper is proposed to extract the local carrier generation and recombination lifetime from forward characteristics of diode. The different geometry p-n junctions have been fabricated by a standard CMOS technology. Among a variety process steps, implantation step may generate defects. Therefore, the local implantation-induced defects have been studied from the defect activation energy, which has been obtained from the ratio of the local carrier generation and recombination lifetime. The forward current-voltage (I-V) and high frequency capacitance-voltage (C-V) characteristics of p-n junctions have been measured in order to obtain the local carrier generation and recombination lifetime. The calculated activation energy from this method gave reasonable values comparing with the ones obtained from the Arrhenius plot of the reverse current. © 2011 Elsevier B.V. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Implantation-induced defects analysis base on activation energy diagnostics(2009-12-01); ; Poyai, AmpornLow power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n junction. Among variety process steps, implantation step may generate defects. Therefore, the implantation-induced defects have been studied from the activation energy which has been obtained from the leakage current of p-n junction. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The current-voltage (I-V) and high frequency capacitance-voltage (C-V) characteristics of p-n junctions with temperature dependence have been measured. The electrically active defects from implantation process can be extracted from the junction generation current density versus temperature. Base on this analysis, it will be demonstrated that the implantation-induced defects have been found in p+-n-well more than in n+-psubstrate. Finally, the possible nature of the defect will be discussed. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Improved extraction of the local carrier generation lifetime from forward diode characteristics(2012-01-01); ; Poyai, AmpornThis paper is proposed to extract the local carrier generation lifetime from forward current-voltage (I-V) characteristics of p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The forward I-V and high frequency capacitance-voltage (C-V) characteristics of p-n junctions have been measured. The recombination current density can be extracted from the area forward current density by subtracting with the area diffusion current density. Form the recombination current density, the local generation and recombination lifetime can be obtained. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Defect distribution and yield analysis technique on silicon wafer(2014-01-01); ; Poyai, AmpornThis paper presents the defect distribution and yield analysis on silicon wafer. The generation and recombination lifetime were the key parameters and obtained from the current- voltage and the capacitance-voltage of diode characteristics for forward bias. Then 3D contour maps were plotted as defect distribution and can be analyzed for the whole wafer which is useful for the yield analysis of the defects that were caused from fabrication process. © (2014) Trans Tech Publications, Switzerland.