Pengchan, Weera
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Preferred name
Pengchan, Weera
Alternative Name
Pengchan, W.
Main Affiliation
Email
weera.pe@kmitl.ac.th
5 results
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Item type:Publication, Study on temperature effect on p-n and Zener junction for PTAT temperature sensor(2008-10-06); ; ; Supadech, J.Research on a new compact BJT PTAT temperature sensor structure has been reported. The zener junction-connected BJT transistor and Base-Emitter voltage of transistor can be temperature dependent. The performance of new compact PTAT circuit can be improved by using difference in thermal characteristics between p-n and zener junction. ΔV/ΔT can be further increased by connecting p-n and zener junction in series. The results show that ΔK/ΔT of the circuit increased by 6.77 timed or 85% compared with conventional PTAT and connecting two p-n and zener junction in series. The result show that ΔK/ΔT of the circuit increased by 3.3 timed or 70%compared with proposed circuit the output voltage is large enough so that it can be used directly without additional amplifier. This also improves S/N ratio and the unique linearity of PTAT is still preserved. The working temperature of circuit is between -60°C to 160°C © 2008 IEEE. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Magnetotransistor sensing by the difference of base and collector current(2004-12-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effect of base width and implantation dose on performance of 3-terminal magnetotransistor(2007-12-01); ; Klunngien, NipapanThis paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (F<inf>L</inf>) from magnetic field. The structure of magnetotransistor is designed like a structure of a PNP bipolar junction transistor which comprises of 3 terminals, i.e., emitter, collector and base. The base width (L) is varied (10, 20 and 30 μm) where the spacing between collector and base is fixed at 40 μm. The emitter and collector regions are doped with boron (BF <inf>2</inf>) at the dose of 3×10<sup>15</sup>, 5×10<sup>15</sup> and 1×10<sup>16</sup> ions/cm<sup>2</sup>. It is found that the sensitivity is increased when increasing L and the implantation dose. It is also demonstrated that the linear relationship between the output voltage of the magnetotransistor circuit and magnetic field can be obtained. © 2007 IEEE. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Extraction of defect in doping silicon wafer by analyzing the lifetime profile method(2008-01-01); ; Poyai, A.The total leakage current in silicon p-n junction diodes compatible with 0.8 μm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density. © 2008 Trans Tech Publications, Switzerland. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Implantation-induced defects analysis base on activation energy diagnostics(2009-12-01); ; Poyai, AmpornLow power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n junction. Among variety process steps, implantation step may generate defects. Therefore, the implantation-induced defects have been studied from the activation energy which has been obtained from the leakage current of p-n junction. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The current-voltage (I-V) and high frequency capacitance-voltage (C-V) characteristics of p-n junctions with temperature dependence have been measured. The electrically active defects from implantation process can be extracted from the junction generation current density versus temperature. Base on this analysis, it will be demonstrated that the implantation-induced defects have been found in p+-n-well more than in n+-psubstrate. Finally, the possible nature of the defect will be discussed.