Muanghlua, Rangson
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Preferred name
Muanghlua, Rangson
Alternative Name
Muanghlua, R.
Muanghlua, Rangsan
Main Affiliation
Email
rangson.mu@kmitl.ac.th
15 results
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Item type:Publication, Investigation of Oxide and Interface Trapped Charge on Threshold Voltage Shift in Gamma Irradiated NMOSFET by Subthreshold Method(2021-04-01) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Porous Silicon Formation by Stain Etching on Pyramid Surface in U-Shape MSM Photodetector(2024-01-01); ; - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Enhancing PV system modeling accuracy with the irradiance intensity selection technique(2026-06-01) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Gamma-radiation Induced Degradation of the Electrical Characteristics of NMOSFETs(2022-01-01); In this paper, we present the gamma-radiation induced degradation of the electrical characteristics of N-channel Metal Oxide Semiconductor Field Effect Transistors (NMOSFETs). The exposure was done with a<sup>60</sup>Co gamma-ray source over the total dose range of 1 kGy to 10 kGy, with a dose rate of 3.9 kGyhr. The effects of irradiation induced degradation on device parameters such as threshold voltage, low field mobility, device transconductance (G<inf>m</inf>), saturation drain current, off state leakage current and subthreshold swing were investigated. The threshold voltage was determined using the linear extrapolation method. The device dimensions with Wide/ Long channel that excluded the Narrow Channel Effect (NCE) and the Short Channel Effect (SCE) were measured. The results showed that the threshold voltage, device transconductance and low field mobility decreased but the saturation drain current, off state leakage current and subthreshold swing increased as the gamma irradiation increased. Finally, the macro parameter models were investigated and discussed. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Effect and Determination of Oxide Trapped Charge and Interface Trapped Charge Density of Threshold Voltage Shift in Irradiated MOSFET by Subthreshold Methodology(2023-10-01); This paper presents the effects and determination of oxide and interface trapped charge density of threshold voltage shift in irradiated MOSFET by subthreshold methodology. The designed dimension, channel width per channel length (W/L) is 20 µm/20 µm. The threshold voltage is extracted by a linear extrapolation methodology. The over all threshold voltage shifts are caused by oxide trapped charge and interface trapped charge. The subthreshold methodology determines the interface trapped charge. The<sup>60</sup>Co gamma-ray source was used for irradiation to a total dose of 10 kGy. The results showed that the threshold voltage shift is approximately-24 mV/kGy for NMOS and-27 mV/kGy for PMOS. The subthreshold swing shift is approximately 1.2 mV/dec.kGy for NMOS and 0.9 mV/dec.kGy for PMOS. The oxide trapped charge density N<inf>OT</inf> and interface trapped charge density N<inf>IT</inf> are found to be increased in NMOS and PMOS respectively. The ratio of ΔN<inf>OT</inf>/ΔN<inf>IT</inf> was approximately 2.2 times for NMOS and 2.8 times. Due to the structure, the channel of NMOS is a surface channel whereas the channel of PMOS is a buried channel. Finally, the effect of gamma irradiation on the PMOS was greater than the effect on NMOS observed from the change in threshold voltage and the ratio of ΔN<inf>OT</inf>/ΔN<inf>IT.</inf>. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, DIELECTRIC AND FATIGUE LIFE ENHANCEMENT IN BaTiO3/Epoxy RESIN BASED COMPOSITES USED AS PIEZOELECTRIC NANOGENERATOR(2025-01-01); ; This study investigates the enhancement of dielectric properties and fatigue life in BaTiO3/epoxy resin composites utilized as the active material in piezoelectric nanogenerators. Through a systematic approach, various fabrication techniques and composite formulations are explored to optimize the dielectric constants, energy density, and piezoelectricity while mitigating fatigue-related degradation. The physical character, phase formation, and chemical properties of these composites are identified via the optical camera, XRD, and FTIR methods, respectively. The frequency dependence of dielectric properties for all samples is measured by an LCR meter. The hysteresis P-E loops are investigated in order to calculate the energy density and energy loss density of materials. The piezoelectric properties of these composites are performed by studying the generated output voltage and current after applying mechanical force to the samples. Moreover, MWCNT nanomaterials have also been incorporated into these composites in order to improve their dielectric value and fatigue life. The results show that the dielectric constant (εr) and dielectric loss (tanδ) of these composites are independent of frequency. After loading BaTiO3 into the epoxy resin matrix, the εr and tanδ significantly increased with the increasing BaTiO3 amount. The energy density and energy loss density of all composites were calculated from these P-E loops, and it is seen that pure epoxy resin shows the lowest energy density and energy loss density values. After loading BaTiO3 into the epoxy resin matrix, both the energy density and the energy loss density of the composites significantly increased. Moreover, after adding 20 percent by volume of BaTiO3 to the system, the energy density increases by 160% compared with pure epoxy resin. For the effect of MWCNT filler, it is seen that the εr, tanδ, energy density and energy loss density are significantly improved after adding 1.5 vol% of MWCNT into the system. The output current generated by applying mechanical force to the sample increased 27 times after adding MWCNT to the BT-filled epoxy resin composite. Finally, it can be concluded that all experimental results demonstrate significant enhancements in dielectric properties, energy density and electric output current, paving the way for the development of robust and efficient piezoelectric nanogenerators for diverse energy harvesting applications. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, High Performance Flexible Tribo/Piezoelectric Nanogenerators based on BaTiO3/Chitosan Composites(2021-01-01); ; Natural biopolymer materials have been of interest in wearable energy harvester technology, especially in biocompatible triboelectric nanogenerators (BTENGs), due to their biodegradable, biocompatible, nontoxic and excellent antibacterial properties. Nevertheless, obstacles concerning economical and biocompatible utilization of triboelectric nanogenerators (TENGs) continue to prevail. The natural biopolymer, chitosan (CS), is composed of a long biopolymer chain of N-acetyl glucosamine. It enables exciting opportunities for low-cost, biodegradable triboelectric nanogenerator (TENG) applications. However, the electrical output performance of CS based on TENGs is low when compared with devices constructed from synthetic polymers. Hence, to enhance electrical output performance, BaTiO<inf>3</inf> nano-powders (BT-NPs) were embedded into the CS as dielectric material, in order to improve electrical properties by increasing the dielectric constant of the composite film. A flexible hybrid piezo/triboelectric nanogenerator, designed by BT-NPs embedded into CS (BT-NPs/CS) composite film, was constructed successfully. The effects of the BaTiO<inf>3</inf> nano-powder (BT-NP) content on the output performance were explored systematically. The device with 5 wt% BT-NPs in CS, and a 160-μm-thick film, exhibited maximum open-circuit voltage (V<inf>OC</inf>) and transferred short-circuit current (I<inf>SC</inf>) of 110.8 V and 10 µA, respectively, as well as maximum power output of 431.8 µW. Practical and application demonstrations also were investigated, namely charged capacitors for storing energy, testing voltage stability and driving commercial LEDs. This work exhibited high electrical performance enhancement of BT-NPs/CS nanocomposite film, which demonstrated better material modification. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Sensing layer combination of vertically aligned ZnO nanorods and graphene oxide for ultrahigh sensitivity IDE capacitive humidity sensor(2020-06-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Frictional heat-assisted performance enhancement in dynamic Schottky contact of Al/Ag2Se-based tribovoltaic nanogenerator(2025-01-01) - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Extraction Methodology and Junction Capacitance Model of PMOSFET in VLSI(2020-03-01); The paper presents the extraction methodology and junction capacitance model of PMOSFET in VLSI. The p-n junction layouts with low perimeter and high perimeter have been designed. The LOCal Oxidation of Silicon (LOCOS) affect was used for the device area and perimeter be precisely determined. The C-V characteristics of P+/NWell junction, PLDD/NWell junction and Psub/NWell junction are measured. The model can be calculated by simple program which gives the error between the results of the measurement and the results of the simulation is in the range of less than 5%