Phetchakul, Toempong

Preferred name

Alternative Name

Phetchakul, T.

Main Affiliation

School of Engineering

toempong.ph@kmitl.ac.th

Now showing 1 - 10 of 11

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The low power magnetotransistor based on the CMOS technology
(2010-07-30)
Sottip, Panyakorn
;
Phetchakul, Toempong
;
Leepattarapongpan, Chana
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Penpondee, Naritchapan
;
Pengpad, Putapon
This paper presents the low power magnetotransistor detect magnetic field density in vertical direction. The devices can detect magnetic field by Lorentz force act upon minority carrier in base and difference between base and collector current (ΔI<inf>CB</inf>) was occurred. The structure of the low power magnetotransistor consist of one emitter, one collector and one base contact and designed decrease emitter injection area was 5 um and growth LOCOS oxide around emitter area. The structure was generated and simulated by TCAD Sentuarus simulation package and shows increase sensitivity of the low power magnetotransistor when compare the three terminals magneto-transistor. From the experiment, the low power magneto-transistor can operate at bias current less than 1 mA and high sensitivity is 20.64 mV/T. The device increase sensitivity 2.53 times at bias current 5 mA and decrease power consumption 85% when compare the three terminals magnetotransistor.
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A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination-deflection effect
(2014-01-01)
Leepattarapongpan, Chana
;
Phetchakul, Toempong
;
Penpondee, Naritchaphan
;
Pengpad, Puttapon
;
Srihapat, Arckom
This article presents a novel magnetotransistor based on carrier recombination-deflection effect for detecting magnetic field in three dimensions (B<inf>X</inf>, B<inf>Y</inf>, and B<inf>Z</inf>) by relying on the difference between base and collector currents (I<inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. All four collector terminals were connected with each other. The same was true for the four base terminals. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the B <inf>X</inf>, B<inf>Y</inf> and B<inf>-Z</inf> direction sensitivity to magnetic field within the range of 0-400 mT are 2, 5 and 14.5%/T, respectively. This research on the merged magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications. © 2014 Elsevier Ltd.
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The increase sensitivity of PNP-magnetotransistor in CMOS technology
(2015-02-02)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Pengpad, Puttapon
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Srihapat, Arckom
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Jeamsaksiri, Wutthinan
This paper presents improve sensitivity of pnp-magnetotransistor for detect vertical magnetic field response. The device structure consisted of one emitter, four collectors and four bases. The four collectors are separate to form four terminals. The same is true for the four bases. The experiment showed that, at 2 and 4mA of biasing current, magnetic field in B<inf>Z</inf> direction sensitivity within the range of 0-400 mT are 0.045 and 0.09 mV/mT in single mode. The sensitivity of merge mode are 0.15 and 0.3 mV/mT. The magnetic field response of merge mode shows 4-time increase of the magnetic field sensitivity comparative to single mode.
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The study of p-n and schottky junction for magnetodiode
(2012-01-01)
Phetchakul, Toempong
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Luanatikomkul, Wittaya
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Leepattarapongpan, Chana
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Chaowicharat, Ekalak
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Pengpad, Putapon
This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.
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The effect injection width and temperature-offset compensation of magnetotransistor
(2011-12-01)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Penpondee, Naritchaphan
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Pengpad, Puttapon
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Srihapat, Arckom
This paper presents effect of injection witdh on Magnetotransistor. Emitter area was confined by LOCOS and the injection window size was varied from 4, 5 to 10 microns. With bias current of 3 mA the window size 4 micron gives best sensitivity at 10mV/T. Measument linearity is 0.1 % full scale. voltage gain of 10 was used for minimizing temperature coefficient to be around 7.9 mV/°C measured from 25 to 125 °C. Temperature coefficient divided by sensitivity give us a relative temperature sensitivity of 7.9 % T/°C. Second magnetic sensor device has been used for temperature compensation. The second device was config as magnetic field immune then it was used as a temperature offset voltage reference. The added module reduces overall temperature sensitivy down to 0.3 % T/°C. © 2011 Published by Elsevier Ltd.
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Magnetotransistor sensing by the difference of base and collector current
(2004-12-01)
Phetchakul, Toempong
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Leepattarapongpan, Chana
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Pengchan, Weera
A bipolar magnetotransistor with asymmetric topology, by using only three terminals, is sensitive to specific magnetic field direction. The sensing mechanism is the difference between collector current I<inf>c</inf> and base current I<inf>B</inf>. The experiment is the comparison between the sensitivity during three terminal mode and regular mode. At each condition, the three terminal mode sensitivity is less than that obtained from regular mode. It indicates that three terminals can be designed for optimum devices.
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A simulation of 3-axis magnetotransistor based on the carrier recombination - Deflection effect
(2014-01-01)
Phetchakul, Toempong
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Muangthong, Samudchad
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Leepattarapongpan, Chana
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Poyai, Amporn
This article presents 3 axis magnetotransistor based on the carrier recombination and deflection effect for detecting the magnetic field in B <inf>X</inf>, B<inf>Y</inf> and B<inf>Z</inf> direction. The structure composes of four magnetotransistors along with x-axis and y-axis that has a common emitter while all collectors and bases are independent. The output is in the form of difference current of collector and base ΔI<inf>CB</inf>. For vertical field detection, the magnetotransistor uses the carrier deflection of the deviation collector current and recombination base current as ΔI <inf>CB</inf>. For lateral field detection B<inf>X</inf> and B<inf>Y</inf> it uses a pair of transistors that emitter biased current perpendicular to magnetic field. The output response is the difference current between collector of one and the base current of the another of a pair transistors as ΔI <inf>C(1)B(3)</inf> and ΔI<inf>C(2)B(4)</inf> for B<inf>X</inf> and B <inf>y</inf>, respectively. The sensitivity at I<inf>E</inf> 5 mA, 0-1 T of B<inf>X</inf>, B<inf>Y</inf> and B<inf>Z</inf> direction are -0.0248 mA/T, -0.0248 mA/T and 0.0092 mA/T, respectively by TCAD Sentaurus simulation. © 2014 IEEE.
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The low power 3D-magnetotransistor based on CMOS technology
(2011-12-01)
Leepattarapongpan, Chana
;
Phetchakul, Toempong
;
Penpondee, Naritchaphan
;
Pengpad, Puttapon
;
Srihapat, Arckom
This article presents a 3D magnetotransistor for detecting magnetic field in three dimensions (B <inf>X</inf>, B <inf>Y</inf>, and B <inf>Z</inf>) by relying on the difference between base and collector currents (ΔI <inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the BX, BY and BZ direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.05, 0.07 and 0.145 mV/mT, respectively. © 2011 IEEE.
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The magnetotransistor for 2-axis magnetic field measurement in CMOS technology
(2015-08-17)
Leepattarapongpan, Chana
;
Phetchakul, Toempong
;
Pengpad, Puttapon
;
Srihapat, Arckom
;
Jeamsaksiri, Wutthinan
This paper presents a magnetotransistor for detecting magnetic field in vertical and lateral directions (B<inf>Y</inf> and B<inf>Z</inf>) by relying on the difference between base and collector currents (ΔI<inf>CB</inf>). It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. The experiment showed that, at 10 mA of biasing current, the B<inf>Y</inf> and B<inf>Z</inf> direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.7 and 1.35 %/T, respectively. The sensitivity at emitter current 20mA are 0.55 and 0.7 %/T for vertical and lateral magnetic field directions, respectively. This research on the magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications.
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The deflection length and emitter width on sensitivity of magnetotransistor
(2011-10-04)
Phetchakul, Toempong
;
Sottip, Panyakorn
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Leepattarapongpan, Chana
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Penpondee, Narichapan
;
Pengpad, Putapon
This paper presents a study of effect of deflection length and emitter width on sensitivity of magnetotransistor. The device has been fabrication on standard CMOS technology. It can detect magnetic field applied vertically to the chip. The structure consists of emitter (n-type), base (p-type) and collector (n-type) on silicon p-substrate. The device can sense magnetic field by Hall Effect theory and carrier deflection resulting to difference between base and collector current (ΔI<inf>CB</inf>) related to magnetic field (B <inf>Z</inf>) strength. From the experiment is comparing emitter width of 4, 5 and 10 micrometer at deflection length of 10 and 20 micrometer. The result shows that increase in injection emitter width cause to the sensitivity decreases and the deflection length of 20 micrometer is the best sensitivity. These results are very useful for developing the magnetotransistor for high sensitivity and performance. © 2011 IEEE.

Phetchakul, Toempong

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