Phetchakul, Toempong

Preferred name

Alternative Name

Phetchakul, T.

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School of Engineering

toempong.ph@kmitl.ac.th

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The low power magnetotransistor based on the CMOS technology
(2010-07-30)
Sottip, Panyakorn
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Phetchakul, Toempong
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Leepattarapongpan, Chana
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Penpondee, Naritchapan
;
Pengpad, Putapon
This paper presents the low power magnetotransistor detect magnetic field density in vertical direction. The devices can detect magnetic field by Lorentz force act upon minority carrier in base and difference between base and collector current (ΔI<inf>CB</inf>) was occurred. The structure of the low power magnetotransistor consist of one emitter, one collector and one base contact and designed decrease emitter injection area was 5 um and growth LOCOS oxide around emitter area. The structure was generated and simulated by TCAD Sentuarus simulation package and shows increase sensitivity of the low power magnetotransistor when compare the three terminals magneto-transistor. From the experiment, the low power magneto-transistor can operate at bias current less than 1 mA and high sensitivity is 20.64 mV/T. The device increase sensitivity 2.53 times at bias current 5 mA and decrease power consumption 85% when compare the three terminals magnetotransistor.
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Magnetic finfet (MAGFinFET)
(2019-07-01)
Pamonchom, Chanvit
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Nakachai, Rattapong
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Sutthinet, Chalin
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Poyai, Amporn
;
Phetchakul, Toempong
This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.
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The defects analysis in CMOS fabrication by arrhenius activation energy technique
(2011-10-04)
Pengchan, Weera
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Phetchakul, Toempong
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Poyai, Amporn
Low power consumption device can be realized by low junction leakage current. This leakage current relates to the defects in the depletion region of p-n junction. Among variety process steps, implantation step may generate defects. Therefore, the implantation-induced defects have been studied from the activation energy which has been obtained from the leakage current of p-n junction. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The current-voltage (I-V) and high frequency capacitance-voltage (C-V) characteristics of p-n junctions with temperature dependence have been measured. The electrically active defects from implantation process can be extracted from the junction generation current density versus temperature. Base on this analysis, it will be demonstrated that the implantation-induced defects have been found in p+-n-well more than in n+-p-substrate. Finally, the possible nature of the defect will be discussed. © 2011 IEEE.
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Simulation of MOSFET as horizontal magnetic MOSFET (MAGFET)
(2017-12-14)
Nakachai, Rattapong
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Phetchakul, Toempong
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Poonsawat, Sawatdipong
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Poyai, Amporn
This work proposes the regular long channel MOSFET structure used as magnetic MOSFET (MOSFET that can detect magnetic field) in parallel direction (y-axis). The structure is regular MOSFET that has drain, gate, source and substrate (body). The mechanism of device is Hall effect in current mode between channel MOSFET current and substrate current in x-axis direction. The dimensions of channel MOSFET are 20 μm wide and 20 μm long. The channel and substrate currents are balance adjusted in the same values at 0.5, 1 and 1.5 mA. From the simulation results by TCAD sentaurus, the relative sensitivity of device is 0.01 T-1 in y and - y direction, respectively. It can be used as magnetic sensor for one dimension in parallel field.
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A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination-deflection effect
(2014-01-01)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Penpondee, Naritchaphan
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Pengpad, Puttapon
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Srihapat, Arckom
This article presents a novel magnetotransistor based on carrier recombination-deflection effect for detecting magnetic field in three dimensions (B<inf>X</inf>, B<inf>Y</inf>, and B<inf>Z</inf>) by relying on the difference between base and collector currents (I<inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. All four collector terminals were connected with each other. The same was true for the four base terminals. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the B <inf>X</inf>, B<inf>Y</inf> and B<inf>-Z</inf> direction sensitivity to magnetic field within the range of 0-400 mT are 2, 5 and 14.5%/T, respectively. This research on the merged magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications. © 2014 Elsevier Ltd.
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The increase sensitivity of PNP-magnetotransistor in CMOS technology
(2015-02-02)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Pengpad, Puttapon
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Srihapat, Arckom
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Jeamsaksiri, Wutthinan
This paper presents improve sensitivity of pnp-magnetotransistor for detect vertical magnetic field response. The device structure consisted of one emitter, four collectors and four bases. The four collectors are separate to form four terminals. The same is true for the four bases. The experiment showed that, at 2 and 4mA of biasing current, magnetic field in B<inf>Z</inf> direction sensitivity within the range of 0-400 mT are 0.045 and 0.09 mV/mT in single mode. The sensitivity of merge mode are 0.15 and 0.3 mV/mT. The magnetic field response of merge mode shows 4-time increase of the magnetic field sensitivity comparative to single mode.
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The study of p-n and schottky junction for magnetodiode
(2012-01-01)
Phetchakul, Toempong
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Luanatikomkul, Wittaya
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Leepattarapongpan, Chana
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Chaowicharat, Ekalak
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Pengpad, Putapon
This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.
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Magnetic GAA (MAG-GAA) for Vertical and Horizontal Magnetic Field Detection
(2024-01-01)
Swe, Khine Thandar Nyunt
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Poyai, Amporn
;
Phetchakul, Toempong
The Gate All Around (GAA) is introduced as a magnetic sensor to sense the vertical and horizontal magnetic field applied to the device. Magnetic GAA (MAG-GAA) consisting of one source contact, one gate contact wrapped around the channel, and four drain contacts are created and simulated for the two-dimensional magnetic field detection using Sentaurus. The proposed device structure of MAG-GAA is designed and operated based on the current mode of the Hall effect. The vertical magnetic field is sensed by activating the drain contacts D<inf>1</inf> and D<inf>2</inf>. To detect the horizontal magnetic field, the drain contacts D<inf>3</inf> and D<inf>4</inf> positioned at the top and bottom surfaces of the device are enabled. The differential drain current is obtained as the magnetic response in both detections. MAG-GAA in which the channel length and width are 10 nm and 5 nm respectively is simulated by applying the magnetic field 0.1 T, 0.2 T, 0.3 T, 0.4 T, and 0.5 T in +z, -z, +y, and -y directions. Their respective magnetic responses are illustrated, and the Hall current reaches the highest value at the magnitude of the magnetic field 0.5 T in both cases of magnetic field detection. The sensitivity of MAG-GAA for vertical magnetic field detection is better than its sensitivity for the horizontal magnetic field.
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The effect injection width and temperature-offset compensation of magnetotransistor
(2011-12-01)
Leepattarapongpan, Chana
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Phetchakul, Toempong
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Penpondee, Naritchaphan
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Pengpad, Puttapon
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Srihapat, Arckom
This paper presents effect of injection witdh on Magnetotransistor. Emitter area was confined by LOCOS and the injection window size was varied from 4, 5 to 10 microns. With bias current of 3 mA the window size 4 micron gives best sensitivity at 10mV/T. Measument linearity is 0.1 % full scale. voltage gain of 10 was used for minimizing temperature coefficient to be around 7.9 mV/°C measured from 25 to 125 °C. Temperature coefficient divided by sensitivity give us a relative temperature sensitivity of 7.9 % T/°C. Second magnetic sensor device has been used for temperature compensation. The second device was config as magnetic field immune then it was used as a temperature offset voltage reference. The added module reduces overall temperature sensitivy down to 0.3 % T/°C. © 2011 Published by Elsevier Ltd.
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The Gapless Design for High Sensitivity of Current Mode Dual Magnetodiode
(2019-04-26)
Sutthinet, Chalin
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Poonsawat, Sawatdipong
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Phetchakul, Toempong
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Poyai, Amporn
This paper presents the design for high sensitivity of magnetic detector device in current mode that uses Lorentz's force deflects current depend on the magnetic density via the dual magnetodiode structure. The current mode devices have two symmetry regions for carrier current receiving that injected from another opposite region. This design has a gap between two carrier current receiving regions that causes some loss and reduce sensitivity. The proposed design has one carrier current receiving region or gapless design that has no loss from gap. The sensitivities of gap 5, 2.5 and 0 μm at 1 mA are 0.0010, 0.0028 and 0.0065 T-1 for split cathode structure and 0.00084, 0.0020 and 0.0051 T-1 for split anode structure, respectively. This design can be applied to all current mode magnetic device for high sensitivity.

Phetchakul, Toempong

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