Phetchakul, Toempong

Preferred name

Alternative Name

Phetchakul, T.

Main Affiliation

School of Engineering

toempong.ph@kmitl.ac.th

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Magnetic finfet (MAGFinFET)
(2019-07-01)
Pamonchom, Chanvit
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Nakachai, Rattapong
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Sutthinet, Chalin
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Poyai, Amporn
;
Phetchakul, Toempong
This paper presents magnetic sensor that uses FinFET structure. It is n channel FinFET with two separate contacts on the fin sides of drain that detects the vertical magnetic field. The gate length, fin height and fin width are 15, 15 and 5 nm, respectively. The device operates by Lorentz's force induced by magnetic field crossed perpendicular with drain current. It acts upon drain current and creates the drain differential current. The linearly dependence shows the sensitivity 181.6 nA/T, at current 1 mA. MAGFinFET is a low power and low voltage magnetic field sensor.
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Simulation of MOSFET as horizontal magnetic MOSFET (MAGFET)
(2017-12-14)
Nakachai, Rattapong
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Phetchakul, Toempong
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Poonsawat, Sawatdipong
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Poyai, Amporn
This work proposes the regular long channel MOSFET structure used as magnetic MOSFET (MOSFET that can detect magnetic field) in parallel direction (y-axis). The structure is regular MOSFET that has drain, gate, source and substrate (body). The mechanism of device is Hall effect in current mode between channel MOSFET current and substrate current in x-axis direction. The dimensions of channel MOSFET are 20 μm wide and 20 μm long. The channel and substrate currents are balance adjusted in the same values at 0.5, 1 and 1.5 mA. From the simulation results by TCAD sentaurus, the relative sensitivity of device is 0.01 T-1 in y and - y direction, respectively. It can be used as magnetic sensor for one dimension in parallel field.
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Contributing parameters for magnetoresistance effect of the new design on Hall plate structure
(2013-09-02)
Phetchakul, T.
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Taisettavatkul, P.
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Yamwong, W.
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Poyai, A.
This paper presents the parameters which contribute magnetoresistance effect of the new design on Hall plate structure when it is compared with series resistance structure. The new design is designed with rectangular aluminum ring surrounding on Hall plate. It creates zero Hall voltage area which the carriers move and deflect freely. The new and classical designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10 15cm-3, temperature 300K at magnetic field 3 Tesla when classical one has metal space about 10 μm. The new design one is easier design than the classical series resistance and has no effect of metal space. Parameters which are used in this experiment are silicon and gallium arsenide at doping concentration 2×1014, 2×1015 and 2×1016 at temperature 200, 250 and 300K with Sentaurus TCAD program for simulation. The new design has the percentage of magnetoresistance effect much higher up to 906% over than the classical series resistance when it is designed with high mobility material, low doping concentration and low temperature. © 2013 IEEE.
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Magnetic TFET (MAG-TFET)
(2022-01-01)
Boonlua, Thanet
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Poyai, Amporn
;
Phetchakul, Toempong
This paper presents a new structural magnetic field sensor device. The device structure uses the basic structure of tunneling field effect transistor (TFET). The mechanism uses the current-mode Hall phenomenon with tunneling electron carriers from source to drain. The device structure consists of source, gate and drain with two separate contacts on both sides D1 and D2 to accommodate the amount of current difference (ID) caused by Lorentz's force deflection. The study is carried out by using TCAD simulation. The magnetic field intensity response is linearly dependence. The sensitivity depends on the amount of current and magnetic field intensity. The sensitivity (S) obtained by this device which has width (Fw) 5 nm, length (Lg) 100 nm and height (Fh) 5 nm at biased current of 1000, 100, 10, 1 µA are 0.0133, 0.0263, 0.0812 and 1.22 µA.T-1 respectively. From this experiment, the best relative sensitivity (SR) is 0.000812 T-1 at 100 µA.
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Non-split drain MAGFET
(2019-07-01)
Nakachai, Rattapong
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Poyai, Amporn
;
Phetchakul, Toempong
This paper presents the design of non-split drain MAGFET for high sensitivity magnetic device. The structure is split drain MAGFET that has no gap between drains so drain is only one drain that has split contacts within a drain. It is proved that MAGFET is not necessary to design by split drain with gap between them. The sensitivity is the highest for non-split drain structure. This study compares sensitivities of the two structures with gap between drains of 3, 2, 1 and 0μm at 0.25 mA, aspect ratio L/W=1, which are 0.0326, 0.0389, 0.0481 and 0.0595 T-1, respectively. The relative sensitivities (S<inf>r</inf>) of non-split drain are also highest at other aspect ratios which are 0.0003, 0.0036, 0.0092 and 0.0231 T-1 for L/W=0.2 and 0.0182, 0.0264, 0.0338 and 0.0479 T-1 for L/W=0.6, respectively. The non-split drain MAGFET is a new design for highest sensitivity. The non-split drain design is the smart way for high sensitivity MAGFET.
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Split-current magnetoresistor
(2013-10-04)
Phetchakul, Toempong
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Taisettavatkul, Prateep
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Yamwong, Wittawat
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Poyai, Amporn
The split-current magnetoresistor is proposed here. The structure likes the series magnetoresistor that one end split into two symmetrical terminals, so it is the magnetoresistor with three terminals. It uses the Hall effect current mode as magnetoresistor but the output is the differential current instead of resistance. It shows good linearity and can detect the magnetic field direction. The sensitivity in the differential current of width 100 μm and length 200 μm at 1 mA is 2.788×10-6 A/T constantly while the conventional one in the differential resistance is varied with magnetic field. It is made of silicon non magnetic material so it is compatible with the modern low-voltage current-mode integrated circuit. © (2013) Trans Tech Publications, Switzerland.
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The new design for magnetoresistance effect on hall plate structure
(2012-10-02)
Phetchakul, T.
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Taisettavatkul, P.
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Pengchan, W.
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Yamwong, W.
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Poyai, A.
This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 μm length, 100 μm width and 1 μm thickness. Both designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10 15cm -3, temperature 300K at magnetic field 3 Tesla. A new design on Hall plate structure is easier than the classical series resistance and has no effect of metal space which is in series resistance structure. © 2012 IEEE.
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MAGFinFET: The channel length effect
(2020-07-01)
Phetchakul, Toempong
;
Pamonchom, Chanvit
;
Poyai, Amporn
This paper studies the channel length effect on MAGFinFET. It is a new magnetic device which its structure is FinFET in nanometer scale. It detects vertical magnetic field like as MAGFET. The parameter is channel length of n channel FinFET which is varied at 10, 20, 30, 40 and 50 nm. The sensitivities at biased current 100 μA of varied channel length are 182.49, 186.41, 190.65, 197.22 and 201.00 nA/T, respectively. It depends linearly on the length of MAGFinFET like as MAGFET in micrometer scale. By comparing with bulk fin channel with the concentration 1015 cm-3, the sensitivity of MAGFinFET and fin resistor at biased current 100 μA are 190.65 and 153.50 nA/T, respectively. The current deflection of induced channel of FinFET is more sensitive than bulk resistor channel in same condition. The induced charges can deflect freely pass through depletion layer in thin fin channel by induced magnetic force not less than or better than in bulk resistor channel.
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High sensitivity non-split drain MAGFET for wireless sensor networks
(2020-08-14)
Nakachai, Rattapong
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Poyai, Amporn
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Phetchakul, Toempong
The non-split drain MAGFET proposed in this paper is aspossess an ideal, highest sensitivity in the same type of device, current mode for low power, and low voltage that can be embedded within a system for wireless sensor networks application. It is a split-drain MAGFET that is designed to have no gap between drains so that there is no loss from the gap. There are two split contacts in one drain to represent the split drains for current difference that induced from due to magnetic field. The relative sensitivity comparison among all the gaps (3, 2, 1, and 0 µm) with all aspect ratio of width (W)/length (L) (L/W = 1, 0.6, and 0.2) at biased current 0.25 mA shows that the zero gap or the non-split drain MAGFET structure gives the highest sensitivity. The sensitivities of the non-split drain at the aspect ratios L/W = 1, 0.6, and 0.2 in this study are 0.0595, 0.0479, and 0.0231 T−1, respectively. It is proved that the gap is not necessary for the MAGFET. It is a new, smart way to design the MAGFET for the highest sensitivity and gap lossless for modern sensor applications.
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A novel dual magnetodiode for wireless sensor networks
(2020-08-14)
Sutthinet, Chalin
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Poyai, Amporn
;
Phetchakul, Toempong
This paper presents a new magnetodiode, the so-called dual magnetodiode, for wireless sensor application. The device is a current mode which can be integrated with a chip compatible with modern low power, low voltage integrated circuit (IC). The structure and operation are completely different from a conventional magnetodiode. The structure is composed of two p–n junctions in that one region is common and the others are split terminals for output of differential current. The underlying mechanism is carrier deflection by induced force from a magnetic field. The carriers are injected from the common region by forward bias. The defection carriers diffuse, deflect, and recombine along substrate through split terminals according to direction and density of the magnetic field linearly and symmetrically. From the comparison of complementary structure of the split cathode and the split anode structure of L<inf>D</inf> = 50 µm, the bias current 1 mA and magnetic field 0.5 T, the relative sensitivities (S<inf>R</inf>) are 11.01 and 11.19 T−1, respectively. This device is a simple p–n junction structure which is compatible with all micro/nanotechnology.

Phetchakul, Toempong

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