Atiwongsangthong, Narin
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Atiwongsangthong, Narin
Alternative Name
Atiwongsangthong, N.
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narin.at@kmitl.ac.th
7 results
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Item type:Publication, Application of chicken eggshell waste as a starting material for synthesizing calcium niobate (Ca4Nb2O9) powder(2015-07-01); ; This study focused on the possibility of using CaCO<inf>3</inf> from chicken eggshell waste as a starting material for synthesizing Ca<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> powder via a conventional solid state reaction. The heat behavior of CaCO<inf>3</inf> and Nb<inf>2</inf>O<inf>5</inf> raw material mixture was studied by thermogravimetric analysis (TGA). Phase formation of Ca<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> was studied as a function of calcination conditions by Fourier transform infrared spectroscopy (FT-IR), Raman spectroscopy and X-ray diffraction (XRD). The morphology and microstructure were charaterized via Scanning electron microscope (SEM). The X-ray fluorescence (XRF) results showed that the chicken eggshell contained more than 96.0% of CaCO<inf>3</inf> by weight. The XRD pattern peaks matched the peaks of calcite CaCO<inf>3</inf> ICDD No. 85-11108 very well. Furthermore, the XRD results and Rietveld refinement analysis confirmed that the purity and single phase of Ca<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> corresponded to the monoclinic structure (ICDD: 49-0911) obtained after the calcination process. The non-isothermal kinetic of Ca<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> also was investigated by the Ozawa methods. This study indicated that CaCO<inf>3</inf> from chicken eggshell waste is an alternative starting material for synthesizing Ca<inf>4</inf>Nb<inf>2</inf>O<inf>9</inf> powder. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Porous Silicon Formation by Stain Etching on Pyramid Surface in U-Shape MSM Photodetector(2024-01-01); ; - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Extraction of mobility degradation, effective channel length and total series resistance of NMOS at elevated temperature(2011-08-12); This article describes the extraction of total series resistance, effective channel length and low field effective channel mobility degradation parameter at temperature in the range of 25°C-125°C of NMOS device. The relation of I<inf>DS</inf> and V<inf>GS</inf> in a linear region was used with a different of channel length. The procedure is based on the measurement of the transconductance characteristics of MOSFET in the linear region. The transconductance characteristics is determine for the several devices of difference drawn channel length. The results shows that, the effective channel length is increased in a range of 5×10<sup>-10</sup> m/°C. The low field mobility degradation parameter is decreased by the factor of 0.733. The total series resistance is increased in the range of 1.4 Ω-μm/°C. The errors between the predicted model and measured of I<inf>DS</inf>&V <inf>GS</inf> in linear region is approximately 3%. © 2011 IEEE. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The effects of gamma irradiation on threshold voltage and channel mobility models of PMOS(2018-07-02); ; Ruangphanit, AnuchaThis paper presents the effects of gamma irradiation on threshold voltage and mobility models of PMOS. The devices with a gate oxide thickness of 15 nm fabricated in an 0.8-micron CMOS technology were measured and tested. The electrical properties were collected pre-irradiation and after the exposure by a<sup>60</sup>Co gamma-ray source in the dose range of 1 to 10 kGy, transient dose = 290.68 Gy/hr. The results show that the threshold voltage of big MOS at zero substrate bias (VT0) increased approximately 28%, but the low field surface mobility (UO) and the maximum transconductance parameter (K0) decreased in the same value by 7.5% and the THETA (? ) parameter decreased by 28%. All parameters caused the saturation drain current of big MOS to decrease 16%. For short channel effects, the saturation drain current decreased more. Finally, the short channel model parameter should be investigated and discussed in future. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, The study of trivalent-dopants effect on electrical properties of the BaZr0.7In0.3O3-δ system(2019-01-02); ; ; Perovskite BaZrO<inf>3</inf> and BaZr<inf>0.7</inf>In<inf>0.3</inf>O<inf>3-δ</inf> (BZI) ceramics were prepared via solid-state reaction. The crystal structure, dielectric and electrical properties of these ceramics were analyzed comparatively. Rietveld analysis indicated that BaZrO<inf>3</inf> and BaZr<inf>0.7</inf>In<inf>0.3</inf>O<inf>3-δ</inf> (BZI) have cubic symmetry with the Pm (Formula presented.) m space group. A small amount of In<inf>2</inf>O<inf>3</inf> was observed in the BZI ceramic. The lattice parameter (a) decreased when a small amount of In<sup>3+</sup> was added. The relative permittivity ε<inf>r</inf>(T) and tan δ(T) of BZ and BZI ceramics behaved as plateaus that were independent of frequency and temperature in a temperature range of below 150 ̊C and 50 ̊C, respectively, which ascribed to the intrinsic dielectric properties resulting from electronic and/or ionic polarization. By increasing the temperature further, both ceramics exhibited colossal dielectric constant (CDC) behavior. Conductivity was greater with increasing temperature, which corresponded to Arrhenius behavior. Activation energies were calculated as 0.522 and 0.620 eV for the BZI and BZ system, respectively. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Nanocrystalline barium zirconium titanate synthesized by the sonochemical processNanocrystalline barium zirconium titanate, BaZr<inf>0.4</inf>Ti<inf>0.6</inf>O<inf>3</inf>, was synthesized successfully via the sonochemical process. The effects of reaction time on the precipitation of Ba(Zr,Ti)O<inf>3</inf> particles were investigated briefly. The crystal structure as well as molecular vibrations and morphology were investigated. X-ray diffraction indicated that the powders exhibited a single phase perovskite structure, without the presence of pyrochlore or unwanted phases at the reaction time of 60 min. Nanocrystals were formed before being oriented and aggregated into large particles in aqueous solution under ultrasonic irradiation. A scanning electron microscopy (SEM) photograph showed the BZT powder as spherical in shape with uniform nanosized features. © (2013) Trans Tech Publications, Switzerland. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Study of Nitride Thickness on Sensitivity IDEs Humidity Sensor Based on Graphene Oxide Sensing(2020-03-01); ; An interdigitaged electrodes (IDEs) humidity sensor was patterned like a combs by lithography process based on silicon bulk substrate with different nitride thickness (50, 100 and 150 nm). This research studied an effect of thick nitride on sensitivity of IDEs humidity sensor based APTES adhesive layer with graphene oxide (GO) sensing material. The IDEs humidity sensor based on GO was comparatively examined all thick nitride conditions. Capacitance value of fresh IDEs humidity sensor shown not significant change all nitride thickness but it affected to sensitivity after GO coating due to high GO densified onto IDEs surface. Scanning Electron Microscope (SEM) was analyzed GO distribution and surface morphology. Raman spectroscopy clearly revealed the GO presence. The sensitivity from 50 to 80 %RH for optimal 100 nm thick nitride shows improvement to 2.78 and 1.27 times or 278.35% and 127.46% based on 50 and 150 nm thick nitride, respectively. Furthermore, the optimal condition of IDEs humidity sensor shows a little response and recovery times (11 and 7 sec), low hysteresis (3.21%), fine repeatability as well as high accuracy on long-term ability test. It clearly demonstrated for high sensitivity of nitride IDEs humidity sensor based on GO sensing film deposition.