Rangkasikorn, Adirek

Preferred name

Alternative Name

Rangkasikorn, A.

Main Affiliation

Integrated Innovative Technology

adirek.ra@kmitl.ac.th

Now showing 1 - 10 of 30

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Metal Oxide Nanostructures Enhanced Microfluidic Platform for Efficient and Sensitive Immunofluorescence Detection of Dengue Virus
(2023-11-01)
Pormrungruang, Pareesa
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Phanthanawiboon, Supranee
;
Jessadaluk, Sukittaya
;
Larpthavee, Preeda
;
Thaosing, Jiraphon
Rapid and sensitive detection of Dengue virus remains a critical challenge in global public health. This study presents the development and evaluation of a Zinc Oxide nanorod (ZnO NR)-surface-integrated microfluidic platform for the early detection of Dengue virus. Utilizing a seed-assisted hydrothermal synthesis method, high-purity ZnO NRs were synthesized, characterized by their hexagonal wurtzite structure and a high surface-to-volume ratio, offering abundant binding sites for bioconjugation. Further, a comparative analysis demonstrated that the ZnO NR substrate outperformed traditional bare glass substrates in functionalization efficiency with 4G2 monoclonal antibody (mAb). Subsequent optimization of the functionalization process identified 4% (3-Glycidyloxypropyl)trimethoxysilane (GPTMS) as the most effective surface modifier. The integration of this substrate within a herringbone-structured microfluidic platform resulted in a robust device for immunofluorescence detection of DENV-3. The limit of detection (LOD) for DENV-3 was observed to be as low as 3.1 × 10−4 ng/mL, highlighting the remarkable sensitivity of the ZnO NR-integrated microfluidic device. This study emphasizes the potential of ZnO NRs and the developed microfluidic platform for the early detection of DENV-3, with possible expansion to other biological targets, hence paving the way for enhanced public health responses and improved disease management strategies.
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Growth window and metal-insulator transition behavior of VO2 thin films deposited by pulsed laser deposition for thermal switch applications
(2026-05-01)
Jessadaluk, Sukittaya
;
Rahong, Sakon
;
Kayunkid, Navaphun
;
Khemasiri, Narathon
;
Rangkasikorn, Adirek
Vanadium dioxide (VO<inf>2</inf>) is a strongly correlated transition metal oxide that exhibits a sharp and reversible metal-insulator transition (MIT) near room temperature, making it a promising material for thermal switching and adaptive electronic applications. In this study, VO<inf>2</inf> thin films were deposited on single-crystalline Si, thermally grown SiO<inf>2</inf>, and fused quartz substrates by pulsed laser deposition, and the influence of substrate temperature and oxygen partial pressure on phase formation, structural properties, and MIT behavior was systematically investigated. By optimizing deposition conditions within a narrow oxygen pressure window, phase-pure monoclinic VO<inf>2</inf>(M) thin films with high crystalline quality were achieved while suppressing the formation of over-oxidized vanadium oxide phases. Structural and chemical analyses using X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy confirmed the stabilization of the V4+ oxidation state and uniform film stoichiometry. Temperature-dependent electrical measurements revealed a pronounced and reproducible MIT characterized by an abrupt change in resistance and a clear thermal hysteresis. In-situ temperature-dependent X-ray diffraction further demonstrated a direct correlation between the monoclinic-rutile structural transformation and the electronic transition. Importantly, the MIT behavior was consistently observed across all investigated substrates, indicating robust film growth and substrate tolerance. These results provide insight into the structure-property relationships governing VO<inf>2</inf> thin films and highlight their potential for integration into thermal switch and thermally adaptive device architectures.
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Development of solution-based electrodes from nanocomposite material between PEDOT:PSS and ITO nanoparticles
(2017-01-01)
Watthanarungsarit, Kraisak
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Wirunchit, Supamas
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Rangkasikorn, Adirek
;
Kayunkid, Navaphun
;
Nukeaw, Jiti
Electrodes based on low-temperature preparation such as ink jet printing have been famously used in plastic electronic devices. The aim of this work is to investigate the specific properties of composite materials between nanoparticles of indium tin oxide (np-ITO) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as an alternative electrode for plastic electronic devices. The composite materials were prepared as a function of np-ITO concentration varied from 1 to 20 w/v%. The 1x1 cm2 hybrid electrodes were fabricated by drop casting method on the microscope slide. This method offers many advantages, including simple preparation, low manufacturing cost and short fabricating time. The electrical resistance of the hybrid films was measured using two-probe measurement. Moreover, the surface morphology of the composited film was explored by optical microscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The results clearly suggest that mixing np-ITO with PEDOT:PSS can significantly improve conductivity of the composited system. Average value of electrical resistance measured from np-ITO, PEDOT:PSS and composite film are 87.58 kΩ, 40.33 kΩ and 393 Ω, respectively. The significant reduction of film resistance can be explained by the conducting paths made up by PEDOT:PSS to connect np-ITO domain.
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Influence of aluminum-doped zinc oxide seeding film on morphological properties of hydrothermally-grown zinc oxide nanorods
(2020-01-01)
Khemasiri, Narathon
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Kayunkid, Navaphun
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Soyeux, Nathan
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Rattanawarinchai, Prapakorn
;
Jessadaluk, Sukittiya
The morphological properties, e.g. diameter, aspect ratio, and density, of zinc oxide nanorods (ZnO-NRs) can be achieved through the control of seeding film morphology in seed-assisted hydrothermal process. The different morphologies of seeding film made by aluminum-doped zinc oxide (AZO) thin films are obtained by varying the thickness of seeding film. The change of seeding morphology from small granules with (002) plane dominant to platelets with (103) plane dominant leads to the significant change in the morphological formation of ZnO-NRs successively grown on the seeding film. The seeding film containing the dominant plane of (002) and small granules offers vertical-aligned ZnO-NRs with high surface area (high density and respect ratio) attributed to high nucleating density as well as the limit of the lateral growth from the surrounding adjacent nanorods. This work provides the consideration of morphological properties of seeding film.
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Hole doping through indium intercalation into nickel phthalocyanine
(2013-04-29)
Prajuabwan, Pakorn
;
Rojanasuwan, Sunit
;
Chanhom, Annop
;
Jaruvanawat, Anuchit
;
Rangkasikorn, Adirek
A new intercalation of indium and nickel phthalocyanine(NiPc) thin films is developed by using thermal co-evaporation technique. X-ray diffractometer(XRD) and optical absorption spectroscopy of In-doped NiPc suggest the crystal structure of In-doped NiPc is α-phase as same as that of pristine NiPc. Current-voltage characteristic of Shottky diode fabricated with In-doped NiPc thin film shows the enhancement of charge carrier concentration due to indium doping. Further photoelectron spectroscopy experiments prove that In-doped NiPc is hole transport material. © (2013) Trans Tech Publications, Switzerland.
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Gold nanoparticles decorated zinc oxide nanorods as electrodes for a highly sensitive non-enzymatic electrochemical glucose detection
(2019-01-01)
Rattanawarinchai, Prapakorn
;
Khemasiri, Narathon
;
Soyeux, Nathan
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Jessadaluk, Sukittaya
;
Klamchuen, Annop
The controlling and monitoring of blood glucose are very important for diabetes patients. We present highly sensitive non-enzymatic electrodes for glucose electrochemical detection based on gold nanoparticles (Au-NPs) decorated zinc oxide nanorods (ZnO-NRs). We prepared ZnO seed layer on ITO/glass substrate and synthesis ZnO-NRs structure by hydrothermal growth technique. A label-free electrode for glucose detection was successfully accomplished by functionalizing Au-NPs on ZnO-NRs. By controlling the Au-NPs density along the ZnO-NRs, the electrode exhibit high sensitivity (157.34 μA cm-2 mM-1) with wide range (0.5-10 mM), low limit of detection (0.055 mM), with excellent stability and repeatability. Moreover, the interference effect of the other molecules such as ascorbic acid (AA) and uric acid (UA) was investigated. Our results illustrate that the present electrode is suitable for glucose detection in human blood samples.
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Evidence of phase transition of indium doped Zinc phthalocyanine
(2013-04-29)
Rojanasuwan, Sunit
;
Prajuabwan, Pakorn
;
Chanhom, Annop
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Jaruvanawat, Anuchit
;
Rangkasikorn, Adirek
A new intercalation of Indium and Zinc Phthalocyanine(ZnPc) thin films is developed by using thermal co-evaporation method. Optical characteristics of In-doped ZnPc are studied in comparison with pristine ZnPc, which shows improvement on optical absorption at the visible spectrum. The presence of a new phase transition upon Indium doping is examined and consequently support the idea of the intercalated phase upon doping. A Schottky diode made of Indium doped ZnPc is fabricated in order to measure its electrical properties, its photo-current spectrum confirms the existence of phase transition. © (2013) Trans Tech Publications, Switzerland.
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Hole doping through indium intercalation into copper phthalocyanine
(2013-10-29)
Jaruvanawat, Anuchit
;
Prajuabwan, Pakorn
;
Rojanasuwan, Sunit
;
Chanhom, Annop
;
Rangkasikorn, Adirek
A blend of molecular acceptor and molecular donor made of Copper Phthalocyanine (CuPc) and Indium in various ratios were evaporated in high vacuum on to intrinsic silicon substrates by using vacuum thermal co-evaporation technique. Electronic properties of In-doped CuPc thin films have been examined by X-ray photoelectron spectroscopy (XPS). The results obtained by XPS suggests that In-doped CuPc is a hole transport material. © (2013) Trans Tech Publications, Switzerland.
1
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Growth and characterizations of tin doped zinc-phthalocyanine prepared by thermal co-evaporation in high vacuum as a nanomaterial
(2016-02-01)
Kayunkid, Navaphun
;
Rangkasikorn, Adirek
;
Saributr, Chaloempol
;
Nukeaw, Jiti
This research is related to the growth and characterizations of the novel hybrid nanomaterial, tin doped zinc-phthalocyanine thin films (Sn-doped ZnPC), grown by thermal co-evaporation. The concentration of Sn in hybrid films was controlled by adjusting the deposition rate between Sn and ZnPc. The hybrid films were characterized by atomic force microscopy and UV-visible spectroscopy to reveal the physical and optical properties of hybrid films. Moreover, the electrical properties, e.g., carrier mobility and carrier concentration, of the indium tin oxide (ITO)/Sn-doped ZnPc/ aluminium (Al) devices were extracted from the current-voltage and capacitance-voltage characteristics. Furthermore, X-ray photoelectron spectroscopy and Raman spectroscopy was employed to explore the chemical interaction taking place in doped films. Sn doping into ZnPc changes the film's specific properties, e.g., morphology, crystalline packing, absorption spectra, and conductivity. Moreover, no chemical bond is formed between Sn and ZnPc, and Sn dopants are formed as metal clusters covered by derivative oxide (SnOx) embedded in the Sn-doped ZnPc film.
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A tunable thermal switching device based on Joule heating-induced metal-insulator transition in VO2 thin films via an external electric field
(2019-01-01)
Jessadaluk, Sukittaya
;
Khemasiri, Narathon
;
Rattanawarinchai, Prapakorn
;
Rahong, Sakon
;
Rangkasikorn, Adirek
A solid state thermal switching device can regulate carrier transport by triggering of its critical transition temperature (T<inf>c</inf>) by applied external thermal energy. Continuous control of the T<inf>c</inf> of the thermal switch by the metal-insulator transition (MIT) phenomenon makes such devices widely usable. In this research, tunable thermal switching devices were fabricated, and characterization of the MIT in VO<inf>2</inf> thin film phase transition material was studied as a function of temperature and the external applied electric field. We observed reversible abrupt changes of the electrical resistivity by approximately three orders of magnitude at T<inf>c</inf> = 62.3 °C for VO<inf>2</inf> thin film on a SiO<inf>2</inf>/Si substrate. The MIT induced by the external electric field successfully controlled the T<inf>c</inf> of the thermal switch between 60 °C and 47 °C (as a linear relationship). We found that the Joule heating effect, rather than electric field breakdown, was a dominant mechanism due to the configuration of the device.
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Rangkasikorn, Adirek

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